Major developments in the semiconductor industry are on the horizon through the use of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for integrated circuits (ICs). 2D Materials for Nanoelectronics is the first comprehensive treatment of these materials and their applications in nanoelectronic devices.Compris
Theory of the Structural, Electronic, and Transport Properties of Graphene. Epitaxial Graphene: Progress on Synthesis and Device Integration. Metal Contacts to Graphene. Graphene for RF Analogue Applications. High-Field and Thermal Transport in Graphene. Theoretical Study of Transition Metal Dichalcogenides. Physico-Chemical Characterisation of MoS2/Metal and MoS2/Oxide Interfaces. Transition Metal Dichalcogenide Schottky Barrier Transistors: A Device Analysis and Material Comparison. TMD-Based Photodetectors, Light Emitters, and Photovoltaics. Optoelectronics, Mechanical Properties, and Strain Engineering in MoS2. Device Physics and Device Mechanics for Flexible TMD and Phosphorene Thin-Film Transistors. Structural, Electronic, and Transport Properties of Silicene and Germanene. Group IV Semiconductor 2D Materials: The Case of Silicene and Germanene. Stanene: A Likely 2D Topological Insulator. Phosphorene: A Novel 2D Material for Future Nanoelectronics and Optoelectronics. 2D Crystal-Based Heterostructures for Nanoelectronics.