2D Materials for Nanoelectronics: 1st Edition (e-Book) book cover

2D Materials for Nanoelectronics

1st Edition

Edited by Michel Houssa, Athanasios Dimoulas, Alessandro Molle

CRC Press

483 pages

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Hardback: 9781498704175
pub: 2016-04-05
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pub: 2016-05-05
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Major developments in the semiconductor industry are on the horizon through the use of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for integrated circuits (ICs). 2D Materials for Nanoelectronics is the first comprehensive treatment of these materials and their applications in nanoelectronic devices.Compris

Table of Contents

Theory of the Structural, Electronic, and Transport Properties of Graphene. Epitaxial Graphene: Progress on Synthesis and Device Integration. Metal Contacts to Graphene. Graphene for RF Analogue Applications. High-Field and Thermal Transport in Graphene. Theoretical Study of Transition Metal Dichalcogenides. Physico-Chemical Characterisation of MoS2/Metal and MoS2/Oxide Interfaces. Transition Metal Dichalcogenide Schottky Barrier Transistors: A Device Analysis and Material Comparison. TMD-Based Photodetectors, Light Emitters, and Photovoltaics. Optoelectronics, Mechanical Properties, and Strain Engineering in MoS2. Device Physics and Device Mechanics for Flexible TMD and Phosphorene Thin-Film Transistors. Structural, Electronic, and Transport Properties of Silicene and Germanene. Group IV Semiconductor 2D Materials: The Case of Silicene and Germanene. Stanene: A Likely 2D Topological Insulator. Phosphorene: A Novel 2D Material for Future Nanoelectronics and Optoelectronics. 2D Crystal-Based Heterostructures for Nanoelectronics.

About the Editors

Michel Houssa earned his master's and PhD in physics at the University of Liege, Belgium. He is presently a professor in the Department of Physics and Astronomy at the University of Leuven, Belgium. His current research focuses on the first principles modeling of various materials, including semiconductor/oxide interfaces and two-dimensional materials (silicene, germanene, and transition metal dichalcogenides), and their heterostructures. He has authored or co-authored nearly 350 publications, given about 50 invited talks and seminars, and been co-organiser of several international symposia and conferences. He is an Electrochemical Society fellow and an Institute of Electrical and Electronics Engineers senior member.

Athanasios Dimoulas earned his PhD in applied physics at the University of Crete, Greece. He is currently the research director and head of the Epitaxy and Surface Science Laboratory at the National Center for Scientific Research "Demokritos," Athens, Greece. He has coordinated several European-funded projects in advanced CMOS and received the European Research Council-funded SMARTGATE - "Smart Gates for the ?Green' Transistor" Advanced Investigator Grant 2011 - "IDEAS." Widely published, Dr. Dimoulas has about 40 invited talks and has been active with several symposia, conferences, and committees as an organizer and chair. He has held fellowships at the University of Groningen, Holland; California Institute of Technology, Pasadena, USA; and University of Maryland, College Park, USA; and been a visiting research scientist at IBM Zurich Research Laboratory, Switzerland.

Alessandro Molle earned his PhD in materials science at the University of Genoa, Italy. He is presently a research scientist and group leader of the research line on low-dimensional materials and devices in the MDM Laboratory at the Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR

Subject Categories

BISAC Subject Codes/Headings:
SCIENCE / Physics