Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters.
- Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs.
- Covers novel indium arsenide architectures for achieving terahertz frequencies
- Discusses impact of device parameters on frequency response
- Illustrates noise characterization of optimized indium arsenide HEMTs
- Introduces terahertz electronics including sources for terahertz applications.
This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
Chapter 1: Introduction to III-V materials and HEMT Structure
Chapter 2: III-V Hetero Structure Devices for Ultra Low, High Power and High Breakdown Applications
Chapter 3: III-V Hetero Structure Devices for High Frequency Applications
R. Saravana Kumar
Chapter 4: Overview of THz Applications
Chapter 5: Device and Simulation Framework of InAs HEMTs
Chapter 6: Single Gate (SG)InAs Based HEMTs Architecture for THz Applications
M. Arun Kumar
Chapter 7: Effect of Gate Scaling and Composite Channel in InAsHEMT
Chapter 8: Double Gate (DG) InAs Based HEMT Architecture for THz Applications
R. Poorna Chandran
Chapter 9: Influence of Dual Channel and Drain Side Recess Length in Double Gate InAs HEMTs
Chapter 10: Noise Analysis in Dual Quantum Well InAs Based Double Gate (DG) - HEMT
Girish Shankar Mishra