Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
- Available for pre-order. Item will ship after October 1, 2021
High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed. The ulterior motive of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters.
- Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs.
- Covers Novel indium arsenide architectures for achieving Terahertz frequencies
- Discusses impact of device parameters on frequency response
- Illustrates noise characterization of optimized indium arsenide HEMT’s
- Introduces Terahertz electronics including sources for terahertz applications.
This book aims at researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
Table of Contents
Chapter 1: Introduction to III-V materials and HEMT Structure
Chapter 2: III-V Hetero Structure Devices for Ultra Low, High Power and High Breakdown Applications
Chapter 3: III-V Hetero Structure Devices for High Frequency Applications
R. Saravana Kumar
Chapter 4: Overview of THz Applications
Chapter 5: Device and Simulation Framework of InAs HEMTs
Chapter 6: Single Gate (SG)InAs Based HEMTs Architecture for THz Applications
M. Arun Kumar
Chapter 7: Effect of Gate Scaling and Composite Channel in InAsHEMT
Chapter 8: Double Gate (DG) InAs Based HEMT Architecture for THz Applications
R. Poorna Chandran
Chapter 9: Influence of Dual Channel and Drain Side Recess Length in Double Gate InAs HEMTs
Chapter 10: Noise Analysis in Dual Quantum Well InAs Based Double Gate (DG) - HEMT
Girish Shankar Mishra
Dr. N. Mohankumar was born in India in 1978. He received his B.E. Degree from Bharathiyar University, Tamilnadu, India, in 2000 and M.E. & Ph.D Degree from Jadavpur University, Kolkata in 2004 & 2010. He joined the Nano Device Simulation Laboratory in 2007 and worked as a Senior Research Fellow under CSIR direct Scheme till September 2009. Later he joined SKP Engineering College as a Professor to develop research activities in VLSI and NANO technology. He initiated and formed the centre of excellence in VLSI and NANO technology at SKP Engg college at the cost of 1 crore.
MoU was signed between SKP and Tokyo Institute of technology, Japan and New Jersey Institute of technology under his guidance. In the year 2010 he visited Tokyo institute of technology, Japan as a visiting professor for the period of three months. In the year 2012 he visited New Jersy Institute of Technology, USA as a visiting professor for a period of 2 months. In 2013 he visited National Chaio Tung University Taiwan as a Research Professor for 2 Weeks. He is currently working as a Professor & Head of EECE Department at GITAM Deemed to be University, Bengaluru Campus.
He is a Senior Member of IEEE and served as Secretary of IEEE, EDS Calcutta chapter from 2007 to 2010. He served as a Chairman of IEEE EDS Madras Chapter from (2010 - 2017). He has about 70 International journal publications in reputed journals and about 50 international conference proceedings. He received the carrier award for young teachers (CAYT) from AICTE , New Delhi, in 2012-2014.
He is a recognized supervisor for research under Anna University and Jadavpur University. 15 PhD Scholars have completed under his supervision. More than 50 M.E students have done their thesis under his guidance. At present, he is guiding 3 PhD Research scholars and 2 M.E students.
His research interest includes modeling and simulation study of HEMTs, optimization of devices for RF applications and characterization of advanced HEMT architecture, Terahertz Electronics, High Frequency Imaging, Sensors and Communication.