Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices: 1st Edition (Hardback) book cover

Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices

1st Edition

Edited by Jo Nijs

CRC Press

466 pages

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Hardback: 9780750302999
pub: 1994-01-01
$350.00
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Description

One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.

Reviews

"… should at least become a recognized text …"

-N.D. Young, Semicond. Sci. Technol.

Table of Contents

Preface Introduction (J F Nijs). Single Crystalline Silicon and its Alloys: Heavy doping effects in Silicon (P/Van Mieghem and R P Mertens): Introduction; The physics of heavy doping effects; Brief review of heavy doping effects; Theories and models; Influence of HDE on Silicon devices; Summary; References. Defects in crystalline silicon (C Claeys and J Vanhellemont): Introduction; Structure of lattice defects; Electronic properties of defects; Device processing related defects; Metallic contamination and gettering; Impact on device properties; References.Molecular beam epitaxy of silicon, silicon alloys and metals (E Kasper and C M Falco: introduction; Electron beam evaporators and metals MBE;Silicon Molecular beam epitaxy (Si-MBE); Applications of Silicon MBE; References. Low thermal budget chemical vapour deposition techniques for Si and SiGe (M R Caymax and W Y Leong): Introduction; Prerequisites for low-temperature growth; Growth systems; Kinetics of CVD growth of Si and SiGe in SiH^O 4/GeH^O4 systems; Doping of low temperature Si and Si^O1-xGe^Ox layers; Selective epitaxial growth (SEG) of Si and SiGe; ^IIn-situ and ^Iex-situ characterisation; References. Materials properties of (strained) SiGe layers (J Poortmans, S C Jain, J Nijs and R Van Overstraeten): Introduction: Structure and stability; The Si-strained SiGe band alignments; The indirect bandgap of strained Si^O1-xGe^Ox; Transport properties and effective density of states in strained Si^O1-xGe^Ox layers; References. SiGe heterojunction bipolar applications (J Poortmans, S C Jain and J Nijs): Introduction; DC-behaviour of the double heterojunction bipolar transistor; Frequency and circuit performance of HBT's with strained Si^O1-xGe^Ox-base; Incorporation of strained Si^O1-xGe^Ox-layers in advanced bipolar technologies; Conclusions; References. Field-effect transistors, infrared detectors, and resonant tunneling devices in silicon/silicon-germanium and ^D*d-doped silicon (M Willander): Introduction; Field-effect transistors; Infrared detectors; Resonant tunneling devices; Summary; References. Crystalline silicon-carbide and its applications (T Sugii): Introduction; Physical properties; Crystalline SiC growth; Device application; Summary; References. Part Two: Polycrystalline silicon. Large grain polysilicon substrates for solar cells; (S Martinuzzi and S Pizzini) Introduction; Growth of polycrystalline (multicrystalline) silicon; The role of oxygen, carbon and point defects in polycrystalline silicon; Electrical properties of multicrystalline silicon wafers; Conclusion; References. Properties analysis and modelling of polysilicon TFTs (P Migliorato and M Quinn): Introduction; Structural properties and density of states; Effect of the DOS on the I-V characteristis; Current-voltage characteristics; Capacitance voltage characteristics; Electric field at the drain and "kink" effect; Conclusions; Appendix; References. Application and technology of polysilicon thin film transistors for liquid crystal displays (C Baert); Introduction; Application of polysilicon thin film transistors; Technology of polysilicon thin films; Polysilicon TFT device structure; Summary; References. The use of polycrystalline silicon and its alloys in VLSI applications (M Y Ghannam): Introduction; Deposition and structural properties of polysilicon; Technological properties of LPCVD polysilicon films; Electrical properties of polysilicon; VLSI applications of polysilicon; Other applications of polysilicon; Semi-insulating polycrystalline silicon (SIPOS); Polycrystalline silicon/germanium alloys; Biographical details. Keyword index.

Subject Categories

BISAC Subject Codes/Headings:
SCI077000
SCIENCE / Solid State Physics
TEC021000
TECHNOLOGY & ENGINEERING / Material Science