Atomic Diffusion in III-V Semiconductors: 1st Edition (Hardback) book cover

Atomic Diffusion in III-V Semiconductors

1st Edition

By Brian Tuck

CRC Press

236 pages

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Hardback: 9780852743515
pub: 1988-01-01
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Description

III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology.

Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.

Reviews

"… comprehensive answers to many practical questions, those seeking more detailed treatment are directed to an excellent bibliography. … concise text of outstanding clarity. Because of these rare qualities the book is strongly recommended for inclusion in libraries associated with either academic or industrial institutions where semiconductor technology is taught or practised."

-The Australian Physicist

Table of Contents

PREFACE

GALLIUM ARSENIDE AND FRIENDS

ELEMENTS OF DIFFUSION

The diffusion equations

Analytical solutions to the diffusion equation

Finite difference methods of solution

Experimental techniques

Analysis of results

Interaction of defects

The built-in field effect

The external system

Assessment of published data

DIFFUSION OF SHALLOW DONORS, INCLUDING GROUP IV

Sulphur

Selenium and tellurium

Tin

Silicon and germanium

SHALLOW ACCEPTORS, ESPECIALLY ZINC

The substitutional-interstitial mechanism

Zinc in GaAs

Zinc in gallium phosphide

Zinc in indium phosphide

Zinc in other compounds

Cadmium in InP

Cadmium in other compounds

Diffusion of other group II elements

DIFFUSION OF TRANSITION ELEMENTS

Chromium in GaAs

Manganese in GaAs

Iron in GaAs

Cobalt in GaAs

Iron and chromium in InP

OTHER FAST DIFFUSERS

Silver in InP

Silver in GaAs

Silver in InAs and GaP

Diffusion of gold

Diffusion of copper

SELF-DIFFUSION AND RELATED PHENOMENA

Diffusion in GaAs

InP and InAs

Self-diffusion in InSb

Diffusion in GaSb

Diffusion in superlattices

Subject Categories

BISAC Subject Codes/Headings:
SCI077000
SCIENCE / Solid State Physics
TEC008000
TECHNOLOGY & ENGINEERING / Electronics / General