Since the first reports on metastable defects in III-V and II-VI compound semiconductors appeared in the late 1960s, the number of reports on defects with metastable states has been growing at an ever increasing rate. D(X)-center and other metastability defects cause many technical problems that are exacerbated by the uncertainty and controversy surrounding the mechanisms that cause them.
A lively mix of theoretical and experimental discussions, D(X)-Centres and other Metastable Defects in Semiconductors presents a timely investigation of these systems. The book discusses topics such as, the validity of negative or positive U models, as well as alternative views that challenge existing ideas. The richness and precision of experimental data now emerging in the field is chronicled as are new investigative techniques. Based on an INT symposium, this book provides a successful forum where an extraordinary variety of ideas, including new perspectives, are examined critically.
Table of Contents
Donor-related levels in GaAs and Al^OxGa^O 1-xAs (P Mooney). Comparison of three DX structural calculations presented at Thessaloniki (G Baraff). Theoretical treatments of DX and EL2 (M Lannoo). The DX centre (T Morgan). Hall measurements under weak persistent photoexcitation in Si-doped Al^OxGa^O1-xAs (A Baraldi et al). The influence of the DX centre C-V and I-V characteristics of Schottky barriers in n-type AlGaAs (C Ghezzi et al). Appearance and destruction of spatial correlation of DX charges in GaAs (Z Wilamowski et al). DX centres and coulomb potential fluctuations (Z Wilamowski et al). Photoconductivity saturation of AlGaAs:Si-a new criterion for negative U (W Jantsch et al). Ionization and capture kinetics of DX centres in AlGaAs and GaSb: approach for a negative-U defect (L Dobaczewski et al). Local-environment dependence of the DX centre in GaAlAs: alloy and superlattice studies (S Contreras et al). Direct study of kinetics of free-electron capture on DX centres (I Itskevich et al). X-ray diffractometer as a tool for examining lattice relaxation phenomena (M Leszczynski et al). Bistability, local symmetries and charge states of Sn-related donors in Al^OxGa^O 1-xAs and GaAs under pressure studied by Mossbauer spectroscopy (D Williamson et al). Observation of a local vibrational mode of DX centres in Si doped GaAs (J Wolk et al). Electron paramagnetic resonance of the shallow Sn donor in GaAs/Al^O0.68Ga^O0.32As:Sn heterostructures (W Wilkening et al). ODMR investigations of DX centres in Sn- and Si-doped Al^OxGa^O1-xAs (M Fockele). Magneto-optical properties of the DX centre in Al^O0.35Ga^O0.65As:Te (R Peale et al). Studies of donor states in Si-doped Al^Ox Ga^O1-xAs using optically detected magnetic resonance with unixial stress (E Glaser and T Kennedy). Magnetic resonance of Sn-doped Al^OxGa^O1-x As detected on photoluminescence (T Kennedy et al). Magnetic resonance studies of group IV and VI donors in Ga1-^OxA^OlxAs (H von Bardeleben). Metastable defects in silicon: hints for DX and EL2? (G Watkins). Negative-U properties of off-centre substitutional oxygen in gallium arsenide (H Ch Alt). A spectroscopic study of a metastable defect in silicon (J Svensson et al). New mechanism for metastability of the 'red' luminescence in electron-irradiated CdS (S Ostapenko). The utilization of DX centres in high-pressure studies of low-dimensional doping structures in GaAs (R Stradling et al). Shift of the DX level in narrow Si delta-doped GaAs (P Koenraad et al). Te-related DX centre of GaAs and AlGaAs (P Wisniewski et al). The effect of high hydrostatic pressure on DX centres in GaAs and GaAsP (V Smid et al). Closing address (R Stradling).