Defects in Optoelectronic Materials: 1st Edition (Hardback) book cover

Defects in Optoelectronic Materials

1st Edition

By Kazumi Wada

CRC Press

379 pages

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Hardback: 9789056997144
pub: 2001-11-06
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Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.

Table of Contents

Saturation of Free Carrier Concentration in Semiconductors

The Amphoteric Defect Model

Maximum Doping Limits in GaAs

Other Group III-V Semiconductors

Group III-Nitrides

Group II-VI Semiconductors

Group I-III-VI2 Ternaries

Other Semiconductors

Unintentional Doping

Amphoteric Dopants

Point Defect Formation Near Surfaces

Point Defect Equilibria near the Semiconductor Surfaces

Point Defect Formation Kinetics in the Sub-Surface Layer - Bottleneck Effect

Bottleneck Related Phenomena

Optical Characterization of Plasma Etching Induced Damage

Ion-assisted Etching: Understanding the Problem

Optical Damage Assessment Techniques: Choosing a Method

The Range of Ion-Induced Damage

Dry Etch Damage in Widegap Semiconductor Materials

Damage in the InGaA1N System

Damage in SiC

Damage in II-VI Compounds

Generation, Removal, and Passivation of Plasma Process Induced Defects

Dry Etching Systems

Plasma Process Indu

Subject Categories

BISAC Subject Codes/Headings:
SCIENCE / Optics