Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan: 1st Edition (Hardback) book cover

Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan

1st Edition

By Ikegami

CRC Press

992 pages

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Hardback: 9780750302500
pub: 1993-01-01
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Description

Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.

Table of Contents

Papers include: Present and future of GaAs IC business (M Fukuta); Scanning tunnelling microscopy of GaAs and related compounds (D K Biegelsen); Low dislocation density 6-inch diameter GaAs single crystals grown by the VCZ method (S Fujiwara et al). Extremely high band width strained layer InGaAs/GaAs quantum well lasers (L F Lester and L F Eastman et al); Room-temperature luminescence of strained InAs/Al^Ox Ga^O0.48=In^O0.52As quantum wells (E Tournle and K H Ploog et al); Electron waveguide devices (J A del Alamo and C C Eugster); A new III/V-gigabit-SRAM cell using a double-emitter resonant tunnelling hot electron transistor structure (T Mori and N Yokoyama et al); Real time u-RHEED observation of III-V growth during molecular beam epitaxy (T Isu et al); Low damage processing of semiconductor quantum structures (E L Hu); C^T+Ar co-implantation for high activity/low diffusion ohmic regions in InAlAs/In^Ox Ga^O1-xAs (X=0.53,0.65) p-channel HIGFETs (Y-J Chan and D Pavlidis); The use of carbon doping in high speed GaAs electronic devices (C R Abernathy); GaAs/GaInP HBT structures grown by CBE with highly C-doped base (C Dubon-Chevalier et al); Compound semiconductor device requirements for VLSI (R B Brown et al).

Subject Categories

BISAC Subject Codes/Headings:
SCI055000
SCIENCE / Physics
TEC008000
TECHNOLOGY & ENGINEERING / Electronics / General
TEC021000
TECHNOLOGY & ENGINEERING / Material Science