GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China.
This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices.
GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Table of Contents
The Growth Technology of High-Voltage GaN on Silicon
Peng Xiang, Liyang Zhang, and Kai Cheng
The Characteristics of Polarization Effects in GaN Heterostructures
The GaN Transistor Fabrication Process
Conventional AlGaN/GaN Heterojunction Field-Effect Transistors
Original Demonstration of Depletion Mode and Enhancement Mode AlGaN/GaN Heterojunction Field-Effect Transistors
Zhigang Wang and Bing Wang
Surface Passivation and GaN MIS HEMTs
Tianli Duan and Zhihong Liu
GaN Vertical Power Devices
Reliability of GaN HEMT Devices
Packaging Technologies for GaN HEMTs
Hongyu Yu and Tianli Duan are bkoth with the Southern University of Science and Technology of China, Shenzhen