In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
Table of Contents
Introduction. Properties of Semiconductors. Heteroepitaxial Growth. Surface and Chemical Considerations in Heteroepitaxy. Mismatched Heteroepitaxial Growth and Strain Relaxation: I. Uniform Layers. Mismatched Heteroepitaxial Growth and Strain Relaxation: II. Graded Layers and Multilayered Structures. Characterization of Heteroepitaxial Layers. Defect Engineering in Heteroepitaxial Material. Metamorphic Devices.
J.E. Ayers, T. Kujofsa, P.B. Rago, and J.E. Raphael are all members of the Semiconductor Materials Research Group at the University of Connecticut, Storrs, USA.
"Concise, didactic and has wide coverage. The book covers the most important aspects of the heteroepitaxy of semiconductors from basics to applications, including characterization techniques. The book is not only an excellent introduction to the diverse field of semiconductor heteroepitaxy, but provides solid background for further, more specialized studies."
— Ferenc Riesz, Centre for Energy Research, Hungarian Academy of Sciences, Hungary