High-k Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), 1st Edition (Hardback) book cover

High-k Gate Dielectric Materials

Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), 1st Edition

Edited by Niladri Pratap Maity, Reshmi Maity, Srimanta Baishya

Apple Academic Press

278 pages | 22 Color Illus. | 69 B/W Illus.

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Hardback: 9781771888431
pub: 2020-02-15
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Description

This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components (or Moore’s law).

This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. Then it discusses the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the different deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book.

Table of Contents

1. Moore’s Law: In 21st Century

Niladri Pratap Maity and Reshmi Maity

2. SiO2 Based MOS Devices: Leakage and Limitations

Niladri Pratap Maity and Reshmi Maity

3. High-κ Dielectric Materials: Structural Properties and Selection

P. Sri Harsha, K. Venkata Saravanan, and V. Madhurima

4. Selection of High-κ Dielectric Materials

Niladri Pratap Maity and Reshmi Maity

5. Tunneling Current Density and Tunnel Resistivity: Application to High-κ Material HfO2

Niladri Pratap Maity and Reshmi Maity

6. Analysis of Interface Charge Density: Application to High-κ Material Tantalum Pentoxide

Niladri Pratap Maity and Reshmi Maity

7. High-κ Material Processing in CMOS VLSI Technology

Partha Pratim Sahu

8. Tunnel FET: Working, Structure, and Modeling

S. Baishya

9. Heusler Compound: A Novel Material for Optoelectronic, Thermoelectric, and Spintronic Applications

D. P. Rai

About the Editors

Niladri Pratap Maity, PhD, is an Associate Professor in the Department of Electronics and Communication Engineering at Mizoram University (A Central University), India.

Reshmi Maity, PhD, is an Assistant Professor in the Department of Electronics and Communication Engineering, Mizoram University (A Central University), Aizawl, India.

Srimanta Baishya, PhD, is a Professor in the Department of Electronics and Communication Engineering at the National Institute of Technology Silchar, India.

Subject Categories

BISAC Subject Codes/Headings:
SCI000000
SCIENCE / General
SCI055000
SCIENCE / Physics
TEC008070
TECHNOLOGY & ENGINEERING / Electronics / Microelectronics
TEC008090
TECHNOLOGY & ENGINEERING / Electronics / Semiconductors