Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Part I: Basic Physical and Chemical Properties Fundamentals and the Future of Semiconductor Device Technology. The Challenge of III-V Materials Integration with Si Microelectronics.Part II: GaN and Related Alloys on Silicon Growth and Integration Techniques III-Nitrides on Si Substrate. New Technology Approaches.Part III: III-V Materials and Device Integration Processes with Si Microelectronics Group III-A Nitrides on Si: Stress and Microstructural Evolution. Direct Growth of III-V Devices on Silicon. Optoelectronic Device Integrated on Si. Reliability of III-V Electronic Devices.Part IV: Defect and Properties Evaluation and Characterization In Situ Curvature Measurements, Strains, and Stresses in the Case of Large Wafer Bending and Multilayer Systems. X-Ray Characterization of Group III-Nitrides. Luminescence in GaN.Part V: Device Structures and Properties GaN-Based Optical Devices on Silicon. The Conventional III-V Materials and Devices on Silicon III-V Solar Cells on Silicon.