This volume deals with the physics and electroelasticity relations of information transducers, i.e. sensors and actuators based on polar dielectrics and semiconductors. The issues are viewed in terms of solid state physics and fracture mechanics. The book contains methods for calculating electrical fields, currents, temperature, mechanical stress-strain state of piezoelectric devices, which are used in measurement equipment and automatic control systems. The book proposes optimal micro-electromechanical and piezoelectronic devices on the basis of computer calculation and experimental data. It will be particularly useful to engineers in electronics, automatics and computing, as well as undergraduates and graduates.
Introduction 1. Polar Dielectrics and Piezosemiconductors. Properties and Use in Home Appliances 1.1. Piezo- and Pyroelectrics, Electrets 1.2. Piezoelectronics in Automobiles 1.3. Techniques for Information Measurement 2. Multifunctional Piezoelectronic Devices 2.1. Piezoceramic Transformers (Pt) 2.2. Field-Controlled Piezotransducers (Fcp) 2.3. Computing Devices 3. Calculation and Optimization of Pz Transducers 3.1. Permissible Values of Current and Electric Field Strength in Polar Dielectrics 3.2. Temperature Effects and Deformation Potential in Ferroelectrics (Tensoresistive and Electrostrictive Effects) 3.3. Automatic Thermostabilization of Ferroelectric (Fe) Resonators (Tandels, Thermostats) 3.4. Choosing the Optimal Excitation Frequency for Piezoelements (Pe) 3.5. Synchronization of Oscillations in Electromechanical Transducers 3.6. Mechanoelectroacoustic Amplifier of Sensor Signals 3.7. Mathematic Model of Porous Mdm (Metal-Dielectric-Metal) Structures 3.8. Calculation of the Critical Electric Field Strength and An Electrophysical Method for Measuring the Curvature Radius of Micropeaks On the Electrode Surfaces in De Diodes 3.9. Studying Material Structure, Mechanical Stresses and Strains by Electrophysical Methods 3.10. New Materials and Technologies in Microelectronics 4. Negatronics 4.1. Devices with Negative Differential Resistance (Ndr) 4.2. Semiconductor Analogues of Inductivity (Sai). Temperature Drift Compensation 4.3. Physical Model of Sai (Equivalent Circuits Technique) Conclusion Appendix Notations and Common Abbreviations References