1st Edition

Introduction to RF Power Amplifier Design and Simulation




ISBN 9781482231649
Published July 29, 2015 by CRC Press
449 Pages 406 B/W Illustrations

USD $165.00

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Book Description

Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book:

  • Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiers
  • Describes the high-frequency model and transient characteristics of metal–oxide–semiconductor field-effect transistors
  • Details active device modeling techniques for transistors and parasitic extraction methods for active devices
  • Explores network and scattering parameters, resonators, matching networks, and tools such as the Smith chart
  • Covers power-sensing devices including four-port directional couplers and new types of reflectometers
  • Presents RF filter designs for power amplifiers as well as application examples of special filter types
  • Demonstrates the use of computer-aided design (CAD) tools, implementing systematic design techniques

Blending theory with practice, Introduction to RF Power Amplifier Design and Simulation supplies engineers, researchers, and RF/microwave engineering students with a valuable resource for the creation of efficient, better-performing, low-profile, high-power RF amplifiers.

Table of Contents

Radio Frequency Amplifier Basics
Introduction
RF Amplifier Terminology
Small-Signal vs. Large-Signal Characteristics
RF Amplifier Classifications
High-Power RF Amplifier Design Techniques
RF Power Transistors
CAD Tools in RF Amplifier Design
References
Radio Frequency Power Transistors
Introduction
High-Frequency Model for MOSFETs
Use of Simulation to Obtain Internal Capacitances of MOSFETs
Transient Characteristics of MOSFET
Losses for MOSFET
Thermal Characteristics of MOSFETs
Safe Operating Area for MOSFETs
MOSFET Gate Threshold and Plateau Voltage
References
Transistor Modeling and Simulation
Introduction
Network Parameters
Network Connections
S-Scattering Parameters
Measurement of S Parameters
Chain Scattering Parameters
Systemizing RF Amplifier Design by Network Analysis
Extraction of Parasitics for MOSFET Devices
References
Resonator Networks for Amplifiers
Introduction
Parallel and Series Resonant Networks
Practical Resonances with Loss, Loading, and Coupling Effects
Coupling of Resonators
Resonators as Impedance Transformers
Tapped Resonators as Impedance Transformers
Reference
Impedance Matching Networks
Introduction
Transmission Lines
Smith Chart
Impedance Matching between Transmission Lines and Load Impedances
Single-Stub Tuning
Impedance Transformation and Matching between Source and Load Impedances
Signal Flow Graphs
Reference
Couplers, Multistate Reflectometers, and RF Power Sensors for Amplifiers
Introduction
Directional Couplers
Multistate Reflectometers
RF Power Sensors
References
Filter Design for RF Power Amplifiers
Introduction
Filter Design by Insertion Loss Method
Stepped-Impedance LPFs
Stepped-Impedance Resonator BPFs
Edge/Parallel-Coupled, Half-Wavelength Resonator Bandpass Filters
End-Coupled, Capacitive Gap, Half-Wavelength Resonator BPFs
References
Computer Aided Design Tools for Amplifier Design and Implementation
Introduction
Passive Component Design and Modeling with CAD–Combiners
Active Component Design and Modeling with CAD
References

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Author(s)

Biography

Abdullah Eroglu is a professor of electrical engineering at Indiana University–Purdue University Fort Wayne (IPFW), USA. He previously worked as a radio frequency (RF) senior design engineer at MKS Instruments, ENI Products, Rochester, New York, USA, and as a faculty fellow in the Fusion Energy Division of Oak Ridge National Laboratory, Tennessee, USA. He holds a M.Sc and Ph.D in electrical engineering from Syracuse University, New York, USA, and is a recipient of the 2013 IPFW Outstanding Researcher Award; 2012 IPFW Featured Faculty Award; 2011 Sigma Xi Researcher of the Year Award; 2010 IPFW College of Engineering, Technology, and Computer Science (ETCS) Excellence in Research Award; and 2004 Syracuse University Electrical Engineering and Computer Science Department Outstanding Graduate Student Award. Dr. Eroglu is the author of four books and has published more than 100 peer-reviewed journal and conference papers. He also serves as a reviewer and editorial board member for several journals.

Reviews

"Modern curriculum developments over the last decade, has tended towards favoring digital aspects of RF engineering, with the result that the difficult area of RF analog design has suffered subsequently. This book addresses this issue very clearly by using many design examples making a difficult subject much more accessible to students and professionals alike."
—Paul Tobin, Dublin Institute of Technology

"A very comprehensive treatment with an excellent use of examples to explain the workings and theory of RF amplifiers."
—Tony Harris, Electronics & Innovation, Ltd.

"The author has many years of experience working in the RF industry as well as teaching the RF courses at IUPU Fort Wayne. This book is a culmination of his extensive work in the RF Power Amplifier. The book blends the theory with practice very well and presents the challenging subject in a clear and understandable manner. The treatment of the RF systems in this book makes it well suited to be the textbook for senior undergraduate or beginning graduate courses in RF Systems. It is also an excellent resource for practicing engineers."
—Jay K. Lee, Syracuse University, Department of Electrical Engineering & Computer Science, New York

"The book is truly written for the RF power amplifier designer and students alike. The content is just at the right level, and the examples are very helpful and easy to apply to practical design work. The color graphs, charts, and pictures are excellent."
IEEE Microwave Magazine, May 2016