Kinetic Studies in GeO2/Ge System
A Retrospective from 2021
- Available for pre-order. Item will ship after May 11, 2022
This title investigates reaction kinetics in GeO2/Ge systems, aiming to demonstrate the fundamentals of the GeO2/Ge interface and to give insight into the distinctive features and performance of Ge (germanium) applied to advanced complementary metal oxide semiconductor (CMOS) devices.
The book first reviews the development of MOS technology and discusses the potentials of emerging Ge and the challenges facing it, as a contentious channel material once promising to replace Si (silicon) for advanced nodes. The study systematically analyses the following aspects of GeO2/Ge stacks that will shed light on the characteristics and reaction principles of the system: GeO2/Ge degradation, Ge passivation techniques, desorption kinetics of GeO from GeO2/Ge, the relationship between GeO2 crystallization and GeO2/Ge interface reaction, and the oxidation kinetics of Ge. Based on findings from the intrinsic properties of GeO2/Ge, the author also compares it with prevalent SiO2/Si systems and demonstrates the essential differences between the two, contributing to quality control, process optimization, and technology advancements of GeO2/Ge.
The book will be a useful reference for researchers, professionals, and students interested in electronic materials, condenser matter physics, microelectronic engineering, and semiconductors.
Table of Contents
1. Introduction 2. Fabrication and Characterization Methods 3. Desorption Kinetics of GeO from GeO2/Ge 4. Structural Transition Kinetics in GeO2/Ge 5. Oxidations in GeO2/Ge Stack
Sheng-Kai Wang is a professor in the Institute of Microelectronics at Chinese Academy of Sciences (IMECAS), China, and Director General of Youth Innovation Promotion Association of IMECAS. He has been engaged in Ge, III-V, SiC in MOS technology for years and has published more than 100 papers and authorized more than 40 patents.