This book focuses on the rapid progress in state-of-the-art dynamic random access memory (DRAM) technology as it has advanced from the Kilo-bit to the Giga-bit regime. Compiled by a panel of experts from the ULSI Process Technology Research and Development Unit at Toshiba Corporation, it provides the reader with the latest information on DRAM technology. This title begins with an overview of recent progress and trends in device technology, particularly the scaling of MOSFETs and DRAM memory cell structures. Various process technologies from lithography to Si wafer technology are described in detail in subsequent chapters, with an emphasis on the theoretical and practical aspects of LSI fabrication as they relate to high-density DRAMs. The material in this book will be particularly valuable for engineers, scientists, and managers engaged in LSI process fabrication and device technology, while also serving as a useful reference for graduate students and university researchers in this field.
1. Memory Cell 2. Dry Etching 3. Thin Film Insulator 4. Impurity Doping 5. Metalization 6. Crystal Technology 7.
SOI Device Technology 8. Lithography 9. Chemical Vapor Deposition 10. Process and Device Simulation
