Microscopy of Semiconducting Materials 1987, Proceedings of the Institute of Physics Conference, Oxford University, April 1987
The various forms of microscopy and related microanalytical techniques are making unique contributions to semiconductor research and development that underpin many important areas of microelectronics technology. Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques. Contributed by numerous international experts, this volume will be an indispensable guide to recent developments in semiconductor microscopy for all those who work in the field of semiconducting materials and research development.
Table of Contents
High resolution microscopy (9 papers). Epitaxial layers (21 papers). Quantum wells and superlattices (11 papers). Properties of dislocations (5 papers). Device silicon and dielectric structures (24 papers). Silicides and contacts (5 papers). Device testing (6 papers). X-ray techniques (5 papers). Microanalysis (6 papers). Advanced scanning microscopy techniques (17 papers). Bulk gallium arsenide and other compounds (15 papers). Author index. Subject index.