599 pages | 373 B/W Illus.
With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies.
Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics.
The book is divided into three parts that address:
This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
Section I: Semiconductor Materials
Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models, A. Maffucci, A.G. Chiariello, C. Forestiere, and G. Miano
Monolithic Integration of Carbon Nanotubes and CMOS, H. Xie
Facile, Scalable, and Ambient—Electrochemical Route for Titania Memristor Fabrication, S. Chaudhary and N.M. Neihart
Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years, K.M. Alam and S. Pramanik
Section II: Silicon Devices and Technology
SiGe BiCMOS Technology and Devices, M. Racanelli and E. Preisler
Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm, A. Afzalian
Development of 3D Chip Integration Technology, K. Sakuma
Embedded Spin–Transfer–Torque MRAM, K. Lee
Nonvolatile Memory Device: Resistive Random Access Memory, P. Zhou, L. Chen, H. Lv, H. Wan, and Q. Sun
DRAM Technology, M.J. Lee
Monocrystalline Silicon Solar Cell Optimization and Modeling, J. Huang and V. Moroz
Radiation Effects on Silicon Devices, M. Bagatin, S. Gerardin, and A. Paccagnella
Section III: Compound Semiconductor Devices and Technology
GaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth Technology, S.-C. Shen, J.-H. Ryou, and R.D. Dupuis
GaN HEMTs Technology and Applications, G.I. Ng and S. Arulkumaran
Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors, C.-T. Lee
GaN-Based HEMTs on Large Diameter Si Substrate for Next Generation of High Power/High Temperature Devices, F. Medjdoub
GaAs HBT and Power Amplifier Design for Handset Terminals, K. Yamamoto
Resonant Tunneling and Negative Differential Resistance in III-Nitrides, V. Litvinov
New Frontiers in Intersubband Optoelectronics Using III- Nitride Semiconductors, P.K. Kandaswamy and E. Monroy