A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices.
Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.
"The selection of material is excellent…very interesting, focused on important issues and with rather informal presentation of crucial ideas and problems…of value for graduates in this discipline…individual articles contain elementary introductions and may be accessible to students in their final year."
Electric field induced localization in superlattices
Intersubband transitions and quantum well infrared photodetectors
Real time spectroscopic ellipsometry monitoring of semiconductor growth and etching
R.W. Collins et al.
X-ray reflectivity from heteroepitaxial layers
Spontaneous and stimulated emissions from optical microcavity structures
H. Yokoyama et al.
Radiative and nonradiative recombination in AlGaAs and GaAsP heterostructures and some features of the corresponding quantum well laser
Zh. I. Alferov and D.Z. Garbuzov
Far-infrared cyclotron resonance of 2-dimensional electron gas in III-V semiconductor heterostructures
Optics in lower dimensional quantum confined II-VI heterostructures
A.V. Nurmikko and R.L. Gunshor
Growth and doping of silicon by low temperature molecular beam epitaxy
H-J Gossmann and D.J. Eaglesham
Point defects and charge traps in the Si/SiO^O2 system and related structures
Growth and characterization of silicon carbide polytypes for electronic applications
J.A. Powell et al.