Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots.
Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals.
World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
"This book gives the state of the art in understanding and tailoring point defects in group IV semiconductors. The reader will find useful and complete information about the mechanisms of formation, migration, and interaction of intrinsic and extrinsic point defects in Si, Ge, and SiGe alloys. This is a unique feature of this work, as it offers the possibility of comparing the peculiar behavior of Si, Ge, and related alloys under one single cover."
—Professor Roberto Fornari, Department of Physics and Earth Sciences, University of Parma, Italy
"This book describes the growth models, impurities, defects, and nanocrystals of silicon, germanium, and their alloys. It is organized well and written by experts with high international reputation in this area. I am attracted by the content in this book. Especially, the book illustrates in detail the formation, diffusion, aggregation, and analysis of point defects not only in silicon, but also in germanium and their alloys, which [provides a] … better understanding of defects in element semiconductor materials. I would like to have this book on my shelf. It is an excellent reference for engineers, researchers, and students."
—Professor Deren Yang, State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, China
Modern Aspects of Czochralski and Multicrystalline Silicon Crystal Growth; Koichi Kakimoto and Bing Gao
Growth and Characterization of Silicon–Germanium Alloys; Ichiro Yonenaga
Germanium on Silicon: Epitaxy and Applications; Daniel Chrastina
Self-Interstitials in Silicon and Germanium; Alexandra Carvalho and Robert Jones
Vacancies in Si and Ge; Eiji Kamiyama, Koji Sueoka, and Jan Vanhellemont
Self- and Dopant Diffusion in Silicon, Germanium, and Their Alloys; Hartmut Bracht
Hydrogen in Si and Ge; Stefan K. Estreicher, Michael Stavola, and Jörg Weber
Point Defect Complexes in Silicon; Edouard V. Monakhov and Bengt G. Svensson
Defect Delineation in Silicon Materials by Chemical Etching Techniques; Bernd O. Kolbesen
Investigation of Defects and Impurities in Silicon by Infrared and Photoluminescence Spectroscopies; Simona Binetti and Adele Sassella
Device Operation as Crystal Quality Probe; Erich Kasper and Wogong Zhang
Silicon and Germanium Nanocrystals; Corrado Spinella and Salvo Mirabella