Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.
Table of Contents
1. Theoretical Studies of Strained-Layer Quantum-Well Lasers 2. Characterization of Strained-Layer Quantum Wells 3. Crystal Growth and Optical Properties of (111)-Oriented Strained-Layer Quantum Wells 4. Strain and Quantum-Confinement Effects in Semiconductor Quantum Wires 5. Visible Emitting (AlGa)InP Laser Diodes 6.
InAsP Strained Quantum Wells and Its Application to 1.3mm Lasers 7. MSM Photodetectors Based on InP/InGaAs 2DEG Structures 8. Optical Gain in Strained Quantum Wells 9. Preparation and Characterization of Strained-Layer Superlattice Structures for Their Application to Laser Diodes 10. Characteristics of Strained InGaAs/InGaAsP 11. Quantum Well Lasers Lattice Matched to GaAs 12. Emission Dynamics of Microcavity Vertical Surface Emitting Lasers