Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2: 1st Edition (Paperback) book cover

Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

1st Edition

Edited by NanoScience & Technology Inst

CRC Press

519 pages

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Paperback: 9780972842280
pub: 2007-06-11
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Table of Contents

Chapter 1:

Advanced Semiconductors

An Electrothermal Solution of the Heat Equation for MMICs Based on the 2D Fourier Series

A. Giorgio and A.G. Perri

Politecnico di Bari, IT

Spectral Analysis of Channel Noise in Nanoscale MOSFETS

G. Casinovi

Georgia Institute of Technology, US

Gate Length Scaling Effects in ESD Protection Ultrathin Body SOI Devices

JW Lee, Y. Li and S.M. Sze

Natl Nano Device Labs & Natl Chiao Tung Univ, TW

A Unified Mobility Model for Excimer Laser Annealed Complementary Thin Film Transistors Simulation

HY Lin, Y. Li, JW Lee, CM Chiu and S.M. Sze

Natl Nano Device Labs & Natl Chiao Tung Univ, TW

Chapter 2:

Nano Scale Device Modeling

Impact of Quantum Mechanical Tunnelling on Offleakage Current in Doublegate MOSFET using a Quantum Driftdiffusion Model

MA Jaud, S. Barraud and G. Le Carval


Methodology for Prediction of Ultra Shallow Junction Resistivities Considering Uncertainties with a Genetic Algorithm Optimization

C. Renard, P. Scheiblin, F. de Crécy, A. Ferron, E. Guichard, P. Holliger and C. Laviron


Fullband Particlebased Simulation of GermaniumOnInsulator FETs

S. Beysserie, J. Branlard, S. Aboud, S.M. Goodnick, T. Thornton and M. Saraniti

Illinois Institute of Technology, US

A TechnologyIndependent Model for Nanoscale Logic Devices

M.P. Frank

University of Florida, US

Hierarchical Simulation Approaches for the Design of UltraFast Amplifier Circuits

J. Desai, S. Aboud, P. Chiney, P. Osuch, J. Branlard, S. Goodnick and M. Saraniti

IIT/Rush University, US

Principles of Metallic Field Effect Transistor (METFET)

S.V. Rotkin and K. Hess

University of Illinois at UrbanaChampaign, Beckman Institute for Advanced Science and Technology, US

Ab Initio Simulation on Mechanical and Electronic Properties of Nanostructures under Deformation

Y. Umeno and T. Kitamura

Kyoto University, JP

Atomistic Process and Simulation in the Regime of sub50nm Gate Length

O. Kwon, K. Kim, J. Seo and T. Won

Inha University, KR

SubThreshold Electron Mobility in SOIMESFETs

T. Khan, D. Vasileska and T.J. Thornton

Arizona State University, US

Chapter 3:

Compact Modeling

Technology Limits and Compact Model for SiGe Scaled FETs

R.W. Dutton and CH Choi

Stanford, US

Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects

Z. Yu, D. Zhang and L. Tian

Tsinghua University, CN

Recent Enhancements of MOS Model 11

R. van Langevelde, A.J. Scholten and D.B.M. Klaassen

Philips Research Laboratories, NL

Noise Modeling with HiSIM Based on SelfConsistent SurfacePotential Description

M. MiuraMattausch, S. Hosokawa, D. Navarro, S. Matsumoto, H. Ueno, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, T. Kage, and S. Miyamoto

Hiroshima University, JP

The Development of Next Generation BSIM for Sub100nm MixedSignal Circuit Simulation

X. Xi, J. He, M. Dunga, CH Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu

University of California at Berkeley, US

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of DeepSubmicron MOSFETs

X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu

Nanyang Technological University, SG

Modeling and Characterization of Wire Inductance for High Speed VLSI Design

N.D. Arora and L. Song

Cadence Design Systems, US

R3, an Accurate JFET and 3Terminal Diffused Resistor Model

C. McAndrew

Motorola, US

Advanced MOSFET Modeling for RF IC Design

Y. Cheng

Skyworks Solutions, US

RF Noise Models of MOSFETs A Review

S. Asgaran and M. Jamal Deen

McMaster University, CA

Bias Dependent Modeling of CollectorBase Junction Effects in Bipolar Transistors

H. Tran and M. Schroter

University of Technology Dresden, DE

Quasi2D Compact Modeling for DoubleGate MOSFET

M. Chan, T.Y. Man, J. He, X. Xi, CH Lin, X. Lin, P.K. Ko, A.M. Niknejad and C. Hu

Hong Kong University of Science and Technology, HK

Compact, PhysicsBased Modeling of Nanoscale Limits of DoubleGate MOSFETs

Q. Chen, L. Wang, R. Murali and J.D. Meindl

Georgia Institute of Technology, US

Floating Gate Devices: Operation and Compact Modeling

P. Pavan, L. Larcher and A. Marmiroli

Università di Modena e Reggio Emilia, IT

A NonChargeSheet Analytic Theory for Undoped Symmetric DoubleGate MOSFETs from the Exact Solution of Poissons Equation using SPP Approach

J. He, X.i Xi, M. Chan, A. Niknejad and C. Hu

University of California, Berkeley, US

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

J. He, X. Xi, M. Chan, A. Niknejad and C. Hu

University of California, Berkeley, US

Linear Cofactor Difference Extrema of MOSFETs Drain Current and Their Application in Parameter Extraction

J. He, X. Xi, M. Chan, A. Niknejad and C. Hu

University of California, Berkeley, US

Extraction of Extrinsic Series Resistance in RF CMOS

M.S. Alam and G.A. Armstrong

The Queen's University of Belfast, UK

Analytic Formulae for the Impact Ionization Rate for use in Compact Models of UltraShort Semiconductor Devices

H.C. Morris, M.M. DePass and H. Abebe

San Jose State University, US

On the Correlations Between Model Process Parameters in Statistical Modeling

J. Slezak, A. Litschmann, S. Banas, R. Mlcousek and M. Kejhar

ON Semiconductor, CZ

A Trial Report: HiSIM1.2 Parameter Extraction for 90 nm Technology

Y. Iino

Silvaco Japan, JP

A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET SmallSignal Model

S.C. Wang, G.W. Huang, K.M. Chen, A.S. Peng, H.C. Tseng and T.L. Hsu

National Nano Device Laboratories, TW

Characterization and Modeling of Silicon Tapered Inductors

A.S. Peng, K.M. Chen, G.W. Huang, S.C. Wang, H.Y. Chen and C.Y. Chang

National Nano Device Laboratories, TW

Improved Compact Model for FourTerminal DG MOSFETs

T. Nakagawa, T. Sekigawa, T. Tsutsumi, M. Hioki, E. Suzuki and H. Koike

National Institute of Advanced Industrial Science and Technology, JP

QuantumMechanical Analytical Modeling of Threshold Voltage in LongChannel DoubleGate MOSFET with Symmetric and Asymmetric Gates

J.L. Autran, D. Munteanu, O. Tintori, S. Harrison, E. Decarre and T. Skotnicki


Automatic BSIM3/4 Model Parameter Extraction with Penalty Functions

Y. Mahotin and E. Lyumkis

Integrated Systems Engineering, Inc., US

An Analytical Subthreshold Current Model for Ballistic DoubleGate MOSFETs

J.L. Autran, D. Munteanu, O. Tintori, M. Aubert and E. Decarre


ThresholdVoltageBased Regional Modeling of MOSFETs with Symmetry and Continuity

S.B. Chiah, X. Zhou, K. Chandrasekaran, KY Lim, L. Chan and S. Chu

Nanyang Technology University, SG

PhysicsBased Scalable ThresholdVoltage Model for StrainedSilicon MOSFETs

K. Chandrasekaran, X. Zhou and S.B. Chiah

Nanyang Technology University, SG

Predicting the SOI History Effect Using Compact Models

M.H. Na, J.S. Watts, E.J. Nowak, R.Q. Williams and W.F. Clark

IBM Corporation, US

New Capabilities for VerilogA Implementations of Compact Device Models

M. Mierzwinski, P. OHalloran, B. Troyanovsky, K. Mayaram and R.W. Dutton

Tiburon Design Automation, US

SelfConsistent Models of DC, AC, Noise and Mismatch for the MOSFET

C. GalupMontoro, M.C. Schneider, A. Arnaud and H. Klimach

Universidade Federal de Santa Catarina, BR

Chapter 4:


Simplified HalfFlash CMOS AnalogtoDigital Conveter

P.B.Y. Tan, A.V. Kordesch and O. Sidek

Silterra Malaysia, MY

ParetoOptimal Modeling for Efficient PLL Optimization

S.K. Tiwary, S. Velu, R.A. Rutenbar, T. Mukherjee

Carnegie Mellon University, US

Scalability and High Frequency Extensions of the Vector Potential Equivalent Circuit (VPEC)

B. Mukherjee, P. Wang, L. Wang and A. Pacelli

Stony Brook University, US

Chapter 5:

System Level Modeling

A FullSystem Dynamic Model for Complex MEMS Structures

L.A. Rocha, E. Cretu and R.F. Wollfenbuttel

Delft University of Technology, NL

MixedDomain Simulation of StepFunctional Voltammetry with an Insoluble Species for Optimization of Chemical Microsystems

S.M. Martin, T.D. Strong, F.H. Gebara and R.B. Brown

University of Michigan, US

SystemLevel Optical Interface Modeling for Microsystems

T.P. Kurzweg, A.S Sharma, S.K. Bhat, S.P. Levitan, D.M. Chiarulli

Drexel University, US

Chapter 6:

MEMS Modeling

Free Surface Flow and AcoustoElastic Interaction in Piezo Inkjet

H. Wijshoff

Océ Technologies B.V., NL

Contact Force Models, including Electric Contact Deformation, for Electrostatically Actuated, CantileverStyle, RF MEMS Switches

R.A. Coutu_Jr. and P.E. Kladitis

Air Force Institute of Technology, US

Electromechanical Buckling of a PreStressed Layer Bonded to an Elastic Foundation

S. AbuSalih and D. Elata

Technion Israel Institute of Technology, IL

ThreeDimensional CFDSimulation of a Thermal Bubble Jet Printhead

T. Lindemann, D. Sassano, A. Bellone, R. Zengerle and P. Koltay

University of Freiburg, DE

Circuit Modeling and Simulation of Integrated Microfluidic Systems

A.N. Chatterjee and N.R. Aluru

Beckman Institute, US

Extending the Validity of Existing SqueezedFilm Damper Models with Elongations of Surface Dimensions

T. Veijola, A. Pursula and P. Raback

Helsinki University of Technology, FI

Feature LengthScale Modeling of LPCVD and PECVD MEMS Fabrication Processes

L.C. Musson, P. Ho, S.J. Plimpton and R.C. Schmidt

Sandia National Laboratories, US

Compact Models for SqueezeFilm Damping in the Slip Flow Regime

R. Sattler and G. Wachutka

Technical Univeristy of Münich, DE

Dynamic Simulation of an Electrostatically Actuated Impact Microactuator

X. Zhao, H. Dankowicz, C.K. Reddy and A.H. Nayfeh

Virginia Tech, US

Microplate Modeling under Coupled StructuralFluidicElectrostatic Forces

M.I. Younis and A.H. Nayfeh

Virginia Tech, US

A Model for Thermoelastic Damping in Microplates

A.H. Nayfeh and M.I. Younis

Virginia Tech, US

Design and Modeling of a 3D Micromachined Accelerometer

S.H. Ghafari, M.F. Golnaraghi and R. Mansour

University of Waterloo, CA

Effect of Thermophysical Property Variations on Surface Micromachined Polysilicon Beam Flexure Actuators

A. Atre and S. Boedo

Rochester Institute of Technology, US

A New 3D Model of The ElectroMechanical Response of Piezoelectric Structures

D. Elata, E. Elka and H. Abramovich

Technion Israel Institute of Technology, IL

Analytical Model for the Pullin Time of LowQ MEMS Devices

L.A. Rocha, E. Cretu and R.F. Wollfenbuttel

Delft University of Technology, NL

Finite Element Validation of an Inverse Approach to the Design of an Electrostatic Actuator

J. Juillard, M. Cristescu and S. Guessab

SUPELEC, Department of Measurement, FR

mor4ansys: Generating Compact Models Directly From ANSYS Models

E.B. Rudnyi, J. Lienemann, A. Greiner and J.G. Korvink

IMTEK, Albert Ludwig University, DE

Piecewise Perturbation Method (PPM) Simulation of Electrostatically Actuated Beam with Uncertain Stiffness

J. Juillard, H. Baili and E. Colinet

SUPELEC, Department of Measurement, FR

Dynamic Simulations of a Novel RF MEMS Switch

M.I. Younis, E.M. AbdelRahman and A.H. Nayfeh

Virginia Tech, US

Using Topology Derived Masks to Facilitate 3D Design

R. Schiek and R. Schmidt

Sandia National Laboratories, US

Modeling, Fabrication and Experiment of a Novel Lateral MEMS IF/RF Filter

M. Motiee, A. Khajepour and R.R. Mansour

University of Waterloo, CA

Characterization of an Electrothermal Microactuator with Multilateral Motion in Plane

C.H. Pan, Y.K. Chen and C.L. Chang

National ChinYi Institute of Technology, TW

MEMS Compact Modeling Meets Model Order Reduction: Examples of the Application of Arnoldi Methods to Microsystem Devices

J. Lienemann, D. Billger, E.B. Rudnyi, A. Greiner and J.G. Korvink

IMTEK, Albert Ludwig University, DE

Guidelines of Creating Krylovsubspace Macromodels for Lateral Viscous Damping Effects

PC Yen and YJ Yang

National Taiwan University, TW

Computationally Efficient Dynamic Modeling of MEMS

D.O. Popa, J. Critchley, M. Sadowski, K.S. Anderson and G. Skidmore

Rensselaer Polytechnic Institute, US

Dynamic Modeling and Input Shaping for MEMS

D.O. Popa, J.T. Wen, H.E. Stephanou, G. Skidmore and M. Ellis

Rensselaer Polytechnic Institute, US

FunctionOriented Geometric Design Approach To Surface Micromachined MEMS

F. Gao and Y.S. Hong

University of Toledo, US

New Accurate 3D Finite Element Technology for Solving Geometrically Complex CoupledField Problems

I. Avdeev, M. Gyimesi, M. Lovell and D. Ostergaard

University of Pittsburgh, US

Interdigitated LowLoss Ohmic RFMEMS Switches

R. Gaddi, M. Bellei, A. Gnudi, B. Margesin and F. Giacomozzi

ARCES University of Bologna, IT

Compliant Force Amplifier Mechanisms for Surface Micromachined Resonant Accelerometers

C.B.W. Pedersen and A.A. Seshia

University of Cambridge, UK

Coupling Of Resonant Modes In Micromechanical Vibratory Rate Gyroscopes

A.S. Phani, A.A. Seshia, M. Palaniapan, R.T. Howe and J. Yasaitis

University of Cambridge, UK

Numerical Modeling of a Piezoelectric Micropump

R. Schlipf, K. Haghighi and R. Lange

Purdue University, US

Identification of Anisoelasticity and Nonproportional Damping in MEMS Gyroscopes

A.S. Phani and A.A. Seshia

University of Cambridge, UK

On the Air Damping of MicroResonators in the FreeMolecular Region

S. Hutcherson and W. Ye

Georgia Institute of Technology, US

Simulation and Modeling of a Bridgetype Resonant Beam for a Coriolis True Mass Flow Sensor

S. Lee, X. Wang, W. Shin, Z. Xiao, K.K. Chin and K.R. Farmer

Microelectronics Research Center, New Jersey Institute of Technology, US

Computational Prototyping of an RF MEMS Switch using Chatoyant

M. Bails, J.A. Martinez, S.P. Levitan, I. Avdeev, M. Lovell and D.M. Chiarulli

University of Pittsburgh, US

Effective Modelling and Simulation of OverHeated Actuators

M. Zubert, M. Napieralska, A. Napieralski and J.L. Noullet

Technical University of Lodz, PL

Static and Dynamic Optical Metrology of MicroMirror Thermal Deformation

C.R. Forest, P. ReynoldsBrown, O. Blum Spahn, J. Harris, E. Novak, C.C. Wong, S. Mani, F. Peter and D. Adams

Sandia National Laboratories, US

Chapter 7:

Modeling Fundamental Phenomena in MEMS

Field induced Dielectrophoresis and Phase Separation for Manipulating Particles in Microfluidics

D.J. Bennett, B. Khusid, C.D. James, P.C. Galambos, M. Okandan, D. Jacqmin, A. Kumar, Z. Qiu and A. Acrivos

New Jersey Institute of Technology, US

Optimal Design of an Electrostatic Zipper Actuator

M.P. Brenner, J.H. Lang, J. Li and A.H. Slocum

Harvard University, US

Taylor Dispersion in Electroosmotic Flows with Random Zeta Potentials

J.P. Gleeson and H.A. Stone

University College Cork, IE

An Integrated Transport Model for Tracking of Individual Exocytotic Events Using a Microelectrode

TH Fan and A.G. Fedorov

Georgia Institute of Technology, US

The Model of Porous Media Complete Description for Aggregation of BeadMonolayers in Flat Microfluidic Chambers

M. Grumann, M. Dobmeier, P. Schippers, T. Brenner, R. Zengerle and J. Ducrée

IMTEK University of Freiburg, DE

Dealing with Stiffness in TimeDomain Stokes Flow Simulation

C.P. Coelho, J.K. White and L.M. Silveira


Modeling the Fluid Dynamics of ElectroWetting on Dielectric (EWOD)

S. Walker and B. Shapiro

University of Maryland, US

Chapter 8:

Computational Methods and Numerics

The TwoLayer ONIOM Technique in the Studies of Chemical Reactions on Carbon Nanotube Tips

V.A. Basiuk and E.V. Basiuk

Universidad Nacional Autonoma de Mexico, MX

Investigation of dsDNA Stretching Mesomechanics using Finite Element Method

C.A. Yuan and K.N. Chiang

National Tsing Hua University, TW

Computational Challenges in Nanoscale Device Modeling

E. Polizzi, A. Sameh and H. Sun

Purdue University, US

An Efficient MultiscaleLinking Algorithm for Particle Deposition

R.V. Magan and R. Sureshkumar

Washington University, US

Numerical Computation of Dispersion Relations for Multilayered Anisotropic Structures

N.D. Botkin, KH Hoffmann, O.A. Pykhteev and V.L. Turova

Center of Advanced European Studies and Research, DE

REMD toolkit : A Composable Software to Generate Parallelized Simulation Programs

M. Ito and U. Nagashima


Effective Elastic Moduli of Nanocomposites with Prescribed Random Orientation of Nanofibers

V.A. Buryachenko and A. Roy

University of Dayton Research Institute, US

Multiscale Simulation of FlowInduced Texture Formation in Thermotropic Liquid Crystals

D. Grecov and A.D. Rey

McGill University, CA

Fast BEM Solution for Coupled 3D Electrostatic and Linear Elastic Problems

N.D. Masters and W. Ye

Georgia Institute of Technology, US

Error Estimation for Arnoldibased Model Order REduction of MEMS

T. Bechtold, E.B. Rudnyi and J.G. Korvink

University of Freiburg, Germany, DE

Perturbation Analysis of TBR Model Reduction in Application to TrajectoryPiecewise Linear Algorithm for MEMS Structures

D. Vasilyev, M. Rewienski and J.K. White

Massachusetts Institute of Technology, US

A Novel Approach for VolumeIntegral Evaluation in the BEM

J. Ding and W. Ye

Georgia Institute of Technology, US

FullLagrangian Based Newton Scheme for Dynamic Analysis of Electrostatic MEMS

S.K. De and N.R. Aluru

Beckman Institute for Advanced Science and Technoloy, US

A pFFT Accelerated Linear Strength BEM Potential Solver

D.J. Willis, J.K. White and J. Peraire

Massachusetts Institute of Technology, US

Numerical and Analytical Studies of Electrothermally Induced Flow And Its Application For Mixing and Cleaning in Microfluidic Systems

J.J. Feng, S. Krishnamoorthy and S. Sandaram

CFD Research Corporation, US

Modelling MicroRheological Effects in Micro Injection Moulding with Dissipative Particle Dynamics

D. Kauzlaric, A. Greiner and J.G. Korvink

University of Freiburg, Germany, DE

New Computational Methods for LongRange Electromagnetic Interactions on the Nanoscale

I. Tsukerman, G. Friedman and D. Halverson

The University of Akron, US

Decay of Nanostructures

F. Hausser and A. Voigt

Research Center Caesar, DE

Simulation of Carbonaceous Mesophases MicroTextures

L.R.P. de Andrade Lima and A.D. Rey

McGill University, CA

A Numerical Algorithm for Complex Biological Flow in Irregular Microdevice Geometries

D. Trebotich, P. Colella, G.H. Miller, A. Nonaka, T. Marshall, S. Gulati and D. Liepmann

Lawrence Livermore National Laboratory, US

InAs/GaAs Quantum Ring in Energy Dependent Quasi Particle Effective Mass Approximation

I. Filikhin , V.M. Suslov, E. Deyneka and B. Vlahovic

North Carolina Central University, US

Corner Charge Singularity of Conductors

CO Hwang and J.A. Given

Inha University, KR

Parallelization of BEM Electrostatic Solver Using a PC Cluster

HK Tang and YJ Yang

National Taiwan University, TW

Improved O(N) Neighbor List Method Using Domain Decomposition and Data Sorting

ZH Yao, JS Wang and M. Cheng

National University of Singapore, SG

Design and Verification of an Electrostatic MEMS Simulator

V. Szekely, G. Bognar, M. Rencz, F. Ciontu, B. Charlot and B. Courtois

Micred, HU

Subject Categories

BISAC Subject Codes/Headings:
SCIENCE / Physics