1st Edition
Introductory Nanoelectronics Physical Theory and Device Analysis
This introductory text develops the reader’s fundamental understanding of core principles and experimental aspects underlying the operation of nanoelectronic devices. The author makes a thorough and systematic presentation of electron transport in quantum-confined systems such as quantum dots, quantum wires, and quantum wells together with Landauer-Büttiker formalism and non-equilibrium Green’s function approach. The coverage encompasses nanofabrication techniques and characterization tools followed by a comprehensive exposition of nanoelectronic devices including resonant tunneling diodes, nanoscale MOSFETs, carbon nanotube FETs, high-electron-mobility transistors, single-electron transistors, and heterostructure optoelectronic devices. The writing throughout is simple and straightforward, with clearly drawn illustrations and extensive self-study exercises for each chapter.
- Introduces the basic concepts underlying the operation of nanoelectronic devices.
- Offers a broad overview of the field, including state-of-the-art developments.
- Covers the relevant quantum and solid-state physics and nanoelectronic device principles.
- Written in lucid language with accessible mathematical treatment.
- Includes extensive end-of-chapter exercises and many insightful diagrams.
Nanoelectronics and Mesoscopic Physics. Part I: Quantum Mechanics for Nanoelectronics. Origins of Quantum Theory. The Schrodinger Wave Equation. Operator Methods and Postulates of Quantum Mechanics. Particle-in-a-Box and Related Problems. The Hydrogen Atom. Part II: Condensed Matter Physics for Nanoelectronics. Drude-Lorentz Free Electron Model. Sommerfield Free Electron Fermi Gas Model. Kronig-Penney Periodic Potential Model. Part III: Electron Behavior in Nanostructures. Quantum Confinement and Electronic Structure of Quantum Dots. Electrons in Quantum Wires and Landauer-Büttiker Formalism. Electrons in Quantum Wells. Part IV: Green’s Function Method for Nanoelectronic Device Modeling. Dirac Delta and Green’s Function Preliminaries. Method of Finite Differences and Self Energy of the Leads. Non-Equilibrium Green’s Function (NEGF) Formalism. Part V: Fabrication and Characterization of Nanostructures. Fabrication Tools. Characterization Facilities. Part VI: Exemplar Nanoelectronic Devices. Resonant Tunneling Diodes. Nanoscale MOSFETs and Similar Devices. High-Electron Mobility Transistors. Single Electron Transistors. Heterostructure Optoelectronic Devices. Index
Biography
Vinod Kumar Khanna is a former emeritus scientist, CSIR (Council of Scientific & Industrial Research) and emeritus professor, AcSIR (Academy of Scientific & Innovative Research), India. He is a retired Chief Scientist and Head, MEMS & Microsensors Group, CSIR-CEERI (CSIR-Central Electronics Engineering Research Institute), Pilani (Rajasthan) and Professor, AcSIR, India.
