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Analog Electronics for Radiation Detection





ISBN 9781138586024
Published March 29, 2018 by CRC Press
290 Pages - 48 Color & 180 B/W Illustrations

 
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Book Description

Analog Electronics for Radiation Detection showcases the latest advances in readout electronics for particle, or radiation, detectors. Featuring chapters written by international experts in their respective fields, this authoritative text:

  • Defines the main design parameters of front-end circuitry developed in microelectronics technologies
  • Explains the basis for the use of complementary metal–oxide semiconductor (CMOS) image sensors for the detection of charged particles and other non-consumer applications
  • Delivers an in-depth review of analog-to-digital converters (ADCs), evaluating the pros and cons of ADCs integrated at the pixel, column, and per-chip levels
  • Describes incremental sigma–delta ADCs, time-to-digital converter (TDC) architectures, and digital pulse-processing techniques complementary to analog processing
  • Examines the fundamental parameters and front-end types associated with silicon photomultipliers used for single visible-light photon detection
  • Discusses pixel sensors with per-pixel TDCs, channel density challenges, and emerging 3D technologies interconnecting detectors and electronics

Thus, Analog Electronics for Radiation Detection provides a single source for state-of-the-art information on analog electronics for the readout of radiation detectors.

Table of Contents

Integrated Analog Signal Processing Readout Front Ends for Particle Detectors
Thomas Noulis

Analog Electronics for HVCMOS Sensors
Ivan Peric

Analog Electronics for Radiation Detection
Juan A. Leñero-Bardallo and Ángel Rodríguez-Vázquez

Low-Noise Detectors through Incremental Sigma–Delta ADCs
Adi Xhakoni and Georges Gielen

Time-to-Digital Conversion
Yasuo Arai

Digital Pulse-Processing Techniques for X-Ray and Gamma-Ray Semiconductor Detectors
Leonardo Abbene, Gaetano Gerardi, and Fabio Principato

Silicon Photomultipliers for High-Performance Scintillation Crystal Readout Applications
Carl Jackson, Kevin O’Neill, Liam Wall, and Brian McGarvey

Designing Photon-Counting, Wide-Spectrum Optical Radiation Detectors in CMOS-Compatible Technologies
Edoardo Charbon and Chockalingam Veerappan

Front-End Electronics for Silicon Photomultipliers
Cristoforo Marzocca, Fabio Ciciriello, Francesco Corsi, Francesco Licciulli, and Gianvito Matarrese

CMOS Image Sensors for Radiation Detection
Nicola Guerrini

Technology Needs for Modular Pixel Detectors
Paul Seller

...
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Editor(s)

Biography

Renato Turchetta is leading the development of high-end complementary metal–oxide semiconductor (CMOS) image sensors at the Rutherford Appleton Laboratory in Didcot, UK, the largest national laboratory in the United Kingdom owned and operated by the Science and Technology Facilities Council (STFC). He earned his master’s degree (Laurea) from the University of Milan, Italy, in 1988 and his PhD in applied physics from the University of Strasbourg, France, in 1991. He worked as an assistant professor there until 1999, the year when he moved to the Rutherford Appleton Laboratory. In his career, he has worked on the development of semiconductor detectors and their readout microelectronics before focusing on CMOS image sensors. He has worked in this area for more than 15 years. He is the author and coauthor of several patents and more than 100 papers that were published in international journals. He is currently an acting member of the scientific committee for Image Sensors Europe, the International Congress on High-Speed Imaging and Photonics, and the Pixel and CPIX conferences.