1st Edition

Atomic Diffusion in III-V Semiconductors



ISBN 9780852743515
Published January 1, 1988 by CRC Press
236 Pages

USD $240.00

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Book Description

III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology.

Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.

Table of Contents

PREFACE

GALLIUM ARSENIDE AND FRIENDS

ELEMENTS OF DIFFUSION
The diffusion equations
Analytical solutions to the diffusion equation
Finite difference methods of solution
Experimental techniques
Analysis of results
Interaction of defects
The built-in field effect
The external system
Assessment of published data

DIFFUSION OF SHALLOW DONORS, INCLUDING GROUP IV
Sulphur
Selenium and tellurium
Tin
Silicon and germanium

SHALLOW ACCEPTORS, ESPECIALLY ZINC
The substitutional-interstitial mechanism
Zinc in GaAs
Zinc in gallium phosphide
Zinc in indium phosphide
Zinc in other compounds
Cadmium in InP
Cadmium in other compounds
Diffusion of other group II elements

DIFFUSION OF TRANSITION ELEMENTS
Chromium in GaAs
Manganese in GaAs
Iron in GaAs
Cobalt in GaAs
Iron and chromium in InP

OTHER FAST DIFFUSERS
Silver in InP
Silver in GaAs
Silver in InAs and GaP
Diffusion of gold
Diffusion of copper

SELF-DIFFUSION AND RELATED PHENOMENA
Diffusion in GaAs
InP and InAs
Self-diffusion in InSb
Diffusion in GaSb
Diffusion in superlattices

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Reviews

"… comprehensive answers to many practical questions, those seeking more detailed treatment are directed to an excellent bibliography. … concise text of outstanding clarity. Because of these rare qualities the book is strongly recommended for inclusion in libraries associated with either academic or industrial institutions where semiconductor technology is taught or practised."
-The Australian Physicist