Broadband RF and Microwave Amplifiers  book cover
1st Edition

Broadband RF and Microwave Amplifiers

ISBN 9781138800205
Published July 26, 2017 by CRC Press

FREE Standard Shipping
USD $89.95

Prices & shipping based on shipping country


Book Description

Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio frequency (RF) and microwave power amplifier design, including well-known historical and recent novel schematic configurations, theoretical approaches, circuit simulation results, and practical implementation strategies. The text begins by introducing two-port networks to illustrate the behavior of linear and nonlinear circuits, explaining the basic principles of power amplifier design, and discussing impedance matching and broadband power amplifier design using lumped and distributed parameters. The book then:

  • Shows how dissipative or lossy gain-compensation-matching circuits can offer an important trade-off between power gain, reflection coefficient, and operating frequency bandwidth
  • Describes the design of broadband RF and microwave amplifiers using real frequency techniques (RFTs), supplying numerous examples based on the MATLAB® programming process
  • Examines Class-E power amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications

Broadband RF and Microwave Amplifiers combines theoretical analysis with practical design to create a solid foundation for innovative ideas and circuit design techniques.

Table of Contents

Two-Port Network Parameters
Traditional Network Parameters
Scattering Parameters
Conversions between Two-Port Parameters
Interconnections of Two-Port Networks
Practical Two-Port Networks
Three-Port Network with Common Terminal
Lumped Elements
Transmission Line
Noise Figure

Power Amplifier Design Principles
Basic Classes of Operation: A, AB, B, and C
Load Line and Output Impedance
Nonlinear Active Device Models
Power Gain and Stability
Push–Pull and Balanced Power Amplifiers
Transmission-Line Transformers and Combiners

Lossless Matched Broadband Power Amplifiers
Impedance Matching
Bode–Fano Criterion
Broadband-Matching Networks with Lumped Elements
Broadband-Matching Networks with Mixed Lumped and Distributed Elements
Matching Networks with Transmission Lines
Matching Technique with Prescribed Amplitude–Frequency Response
Practical Examples of Broadband RF and Microwave Power Amplifiers
Broadband Millimeter-Wave Power Amplifiers

Lossy Matched and Feedback Broadband Power Amplifiers
Amplifiers with Lossy Compensation Networks
Feedback Amplifiers
Graphical Design of Gain-Compensating and Feedback Lossy Networks
Decomposition Synthesis Method

Design of Wideband RF and Microwave Amplifiers Employing Real Frequency Techniques
Real Frequency Line Segment Technique
Generation of Minimum Immittance Function from Its Real Part
Optimization of TPG Using a Parametric Approach
High-Precision Ladder Synthesis of Positive Real Functions
Automated Real Frequency Design of Lossless Two-Ports for Single Matching Problems
Computation of Actual Elements
Automated Design of Matching Networks with Lumped Elements
Design of Interstage Equalizers: Double Matching Problem
Matching Networks Constructed with Commensurate Transmission Lines
Generation of Realizable Positive Real Function in Richards’s Domain
Integration of Richards’s High-Precision Synthesis Module with Real Frequency Matching Algorithm
SRFTs to Design RF and Microwave Amplifiers
SRFT to Design Microwave Amplifiers
SRFT Single-Stage Microwave Amplifier Design Algorithm
Design of an Ultra-Wideband Microwave Amplifier Using Commensurate Transmission Lines
Physical Realization of Characteristic Impedance
Practical Design of Matching Networks with Mixed Lumped and Distributed Elements
Physical Realization of a Single Inductor

High-Efficiency Broadband Class-E Power Amplifiers
Reactance Compensation Technique
High-Efficiency Switching Class-E Modes
Broadband Class E with Shunt Capacitance
Broadband Parallel-Circuit Class E
High-Power RF Class-E Power Amplifiers
Microwave Monolithic Class-E Power Amplifiers
CMOS Class-E Power Amplifiers

Broadband and Multiband Doherty Amplifiers
Historical Aspect and Conventional Doherty Architectures
Inverted Doherty Amplifiers
Digitally-Driven Doherty Amplifier
Multiband and Broadband Capability

Low-Noise Broadband Amplifiers
Basic Principles of Low-Noise Amplifier Design
Lossless Matched Broadband Low-Noise Amplifiers
Lossy Feedback Broadband Low-Noise Amplifiers
Cascode Broadband Low-Noise Amplifiers
Graphical Design Technique
Broadband Millimeter-Wave Low-Noise Amplifiers

Distributed Amplifiers
Basic Principles of Distributed Amplification
Microwave GaAs FET Distributed Amplifiers
Cascode Distributed Amplifiers
Extended Resonance Technique
Cascaded Distributed Amplifiers
Matrix Distributed Amplifiers
CMOS Distributed Amplifiers
Noise in Distributed Amplifiers

CMOS Amplifiers for UWB Applications
UWB Transceiver Architectures
Distributed CMOS Amplifiers
Common-Gate CMOS Amplifiers
CMOS Amplifiers with Lossy Compensation Circuits
Feedback CMOS Amplifiers
Noise-Canceling Technique

View More



Andrei Grebennikov earned his engineering diploma in radio electronics from the Moscow Institute of Physics and Technology, Russia, and his Ph.D in radio engineering from the Moscow Technical University of Communications and Informatics, Russia. He worked as an engineer, researcher, lecturer, and educator at Moscow Technical University of Communications and Informatics, Russia; Institute of Microelectronics, Singapore; M/A-COM, Ireland; Infineon Technologies, Germany/Austria; Bell Labs, Alcatel-Lucent, Ireland; and Microsemi Corporation, USA. He served as a guest professor at the University of Linz, Austria, and as an invited speaker at the IEEE International Microwave Symposia, European and Asia-Pacific Microwave Conferences; Institute of Microelectronics, Singapore; Motorola Design Centre, Malaysia; Tomsk State University of Control Systems and Radioelectronics, Russia; and RWTH Aachen University, Germany. A senior member of the IEEE, he has authored and coauthored eight books and more than 100 papers, and has 25 European and U.S. patents and patent applications.

Narendra Kumar earned his Ph.D in electrical engineering from RWTH Aachen University, Germany. He worked in R&D at Motorola Solutions, USA, as a principal staff engineer. He has several U.S. patents, all assigned to Motorola Solutions, in the area of radio frequency (RF) and microwave amplifier circuitry. Currently, he is an associate professor in the Department of Electrical Engineering at the University of Malaya, Kuala Lumpur, Malaysia. He is also an appointed visiting professor at Istanbul University, Turkey. He has authored and coauthored more than 50 papers in technical journals and conferences, and two international books. He has conducted seminars related to RF and microwave power amplifiers in Europe and Asia Pacific. He is a fellow of the IET, a senior member of the IEEE, and an appointed member of the IEEE Industry Relations Team of Asia Pacific.

Binboga S. Yarman earned his Ph.D from Cornell University, Ithaca, New York, USA. He was a Microwave Technology Center technical staff member at the David Sarnoff Research Center, Princeton, New Jersey, USA; professor at Anatolia University-Eskisehir, Middle East Technical University-Ankara, Technical University of Istanbul, and Istanbul University, all in Turkey; cofounder of I-ERDEC Maryland, STFA SAVRONIK, and ARES Security Systems, Inc.; chief technical adviser to the Turkish Prime Ministry Office; director of Electronic and Technical Security of Turkey; founding president of Isik University, Istanbul, Turkey; and visiting professor at Ruhr University, Bochum, Germany, and Tokyo Institute of Technology, Japan. Dr. Yarman has published more than 200 papers and four U.S. patents; has received the Young Turkish Scientist Award, National Research and Technology Counsel of Turkey Technology Award, and Man of the Year in Science and Technology of Cambridge Biography Center, UK; and is an IEEE fellow, an Alexander Von Humboldt research fellow, and a member of the New York Academy of Science.


"… very comprehensive. Each chapter has a strong theoretical foundation. Working on those foundations, the authors provide detailed descriptions and practical examples of a range of power amplifier types. The chapter references are also extensive. … This book is a strong contender to become a standard text for advanced students as well as practicing engineers. … certainly recommended as an addition to serious RF and microwave power amplifier designers and practitioners."
—Raymond Pengelly, Founder/Owner of Prism Consulting NC, LLC, Hillsborough, North Carolina, USA