1st Edition
Compound Semiconductors 1998 Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors held in Nara, Japan, 12-16 October 1998
892 Pages
by
CRC Press
892 Pages
by
CRC Press
Also available as eBook on:
Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices.... Read more
Review Papers (3 papers)
Optoelectronic Devices and OEICs (10 papers)
Long-Wavelength and Intersubband Transition (7 papers)
Optical Properties (7 papers)
Field-Effect Transistors: FETs and HEMTs (16 papers)
Hetero-Bipolar Transistors: HBTs (6 papers)
Semiconductor Device Physics (12 papers)
Quantum Wires (6 papers)
Quantum Dots (13 papers)
Material Growth (12 papers)
Material Characterization (12 papers)
Material Growth and Characterization: Wide Gap and Nitride (17 papers)
Doping and Processing (13 papers)
Late News (11 papers)
Author and Subject Index
Optoelectronic Devices and OEICs (10 papers)
Long-Wavelength and Intersubband Transition (7 papers)
Optical Properties (7 papers)
Field-Effect Transistors: FETs and HEMTs (16 papers)
Hetero-Bipolar Transistors: HBTs (6 papers)
Semiconductor Device Physics (12 papers)
Quantum Wires (6 papers)
Quantum Dots (13 papers)
Material Growth (12 papers)
Material Characterization (12 papers)
Material Growth and Characterization: Wide Gap and Nitride (17 papers)
Doping and Processing (13 papers)
Late News (11 papers)
Author and Subject Index
Biography
H. Sakaki, J. C. Woo, N. Yokoyama and Y. Harayama
