Computational Electronics Semiclassical and Quantum Device Modeling and Simulation

Introduction to Computational Electronics
Si-Based Nanoelectronics
Heterostructure Devices in III–V or II–VI Technology
Modeling of Nanoscale Devices
The Content of This Book

Introductory Concepts
Crystal Structure
Semiconductors
Band Structure
Preparation of Semiconductor Materials
Effective Mass
Density of States
Electron Mobility
Semiconductor Statistics
Semiconductor Devices

Semiclassical Transport Theory
Approximations for the Distribution Function
Boltzmann Transport Equation
Relaxation-Time Approximation
Rode’s Iterative Method
Scattering Mechanisms: Brief Description
Implementation of the Rode Method for 6H-SiC Mobility Calculation

The Drift-Diffusion Equations and Their Numerical Solution
Drift-Diffusion Model Derivation
Drift-Diffusion Application Example

Hydrodynamic Modeling
Introduction
Extensions of the Drift-Diffusion Model
Stratton’s Approach
Hydrodynamic (Balance, Bløtekjær) Equations Model
The Need for Commercial Semiconductor Device Modeling Tools
State-of-the-Art Commercial Packages
The Advantages and Disadvantages of Hydrodynamic Models: Simulations of Different Generation FD SOI Devices

Particle-Based Device Simulation Methods
Direct Solution of Boltzmann Transport Equation: Monte Carlo Method
Multi-Carrier Effects
Device Simulations
Coulomb Force Treatment within a Particle-Based Device Simulation Scheme
Representative Simulation Results of Multiparticle and Discrete Impurity Effects

Modeling Thermal Effects in Nano-Devices
Some General Aspects of Heat Conduction
Classical Heat Conduction in Solids
Form of the Heat Source Term
Modeling Heating Effects with Commercial Simulation Packages
The ASU Particle-Based Approach to Lattice Heating in Nanoscale Devices
Open Problems

Quantum Corrections to Semiclassical Approaches
One-Dimensional Quantum-Mechanical Space Quantization
Quantum Corrections to Drift-Diffusion and Hydrodynamic Simulators
The Effective Potential Approach in Conjunction with Particle-Based Simulations
Description of Gate Current Models Used in Device Simulations
Monte Carlo—k _ p—1D Schrödinger Solver for Modeling Transport in p-Channel Strained SiGe Devices

Quantum Transport in Semiconductor Systems
Tunneling
General Notation
Transfer Matrix Approach
Landauer Formula and Usuki Method

Far-From-Equilibrium Quantum Transport
Mixed States and Distribution Function
Irreversible Processes and MASTER Equations
The Wigner Distribution Function
Green’s Functions
Nonequilibrium Keldysh Green’s Functions
Low Field Transport in Strained-Si Inversion Layers
NEGF in a Quasi-1D Formulation
Quantum Transport in 1D—Resonant Tunneling Diodes
Coherent High-Field Transport in 2D and 3D

Conclusions

Appendix A: Electronic Band Structure Calculation
Appendix B: Poisson Equation Solvers
Appendix C: Computational Electromagnetics
Appendix D: Stationary and Time-Dependent Perturbation Theory

Each chapter concludes with "Problems" and "References"

Biography

Dragica Vasileska, Stephen M. Goodnick, Gerhard Klimeck