1st Edition
Defects in Microelectronic Materials and Devices
Defects in Ultra-Shallow Junctions. Hydrogen-Related Defects in Silicon, Germanium, and Silicon–Germanium Alloys. Defects in Strained-Si MOSFETs. The Effect of Defects on Electron Transport in Nanometer-Scale Electronic Devices: Impurities and Interface Roughness. Electrical Characterization of Defects in Gate Dielectrics. Dominating Defects in the MOS System: Pb and E0 Centers. Oxide Traps, Border Traps, and Interface Traps in SiO2. From 3D Imaging of Atoms to Macroscopic Device Properties. Defect Energy Levels in HfO2 and Related High-K Gate Oxides. Spectroscopic Studies of Electrically Active Defects in High-k Gate Dielectrics. Defects in CMOS Gate Dielectrics. Negative Bias Temperature Instabilities in High-k Gate Dielectrics. Defect Formation and Annihilation in Electronic Devices and the Role of Hydrogen. Toward Engineering Modeling of Negative Bias Temperature Instability. Wear-Out and Time-Dependent Dielectric Breakdown in Silicon Oxides. Defects Associated with Dielectric Breakdown in SiO2-Based Gate Dielectrics. Defects in Thin and Ultrathin Silicon Dioxides. Structural Defects in SiO2–Si Caused by Ion Bombardment. Impact of Radiation-Induced Defects on Bipolar Device Operation. Silicon Dioxide–Silicon Carbide Interfaces: Current Status and Recent Advances. Defects in SiC. Defects in Gallium Arsenide. Appendix: Selected High-Impact Journal Articles on Defects in Microelectronic Materials and Devices.
Biography
Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf
