1st Edition

Design Rules in a Semiconductor Foundry

Edited By Eitan N. Shauly Copyright 2023
830 Pages 154 Color & 248 B/W Illustrations
by Jenny Stanford Publishing

830 Pages 154 Color & 248 B/W Illustrations
by Jenny Stanford Publishing

Nowadays over 50% of integrated circuits are fabricated at wafer foundries. This book presents a foundry-integrated perspective of the field and is a comprehensive and up-to-date manual designed to serve process, device, layout, and design engineers. It comprises chapters carefully selected to cover topics relevant for them to deal with their work. The book provides an insight into the different... Read more

1. Layout Design Rules: Definition, Setting and Scaling 
Eitan N. Shauly 
2. Front-End-Of-Line Topological Design Rules 
Eitan N. Shauly 
3. Back-End-Of-Line Topological Design Rules 
Eitan N. Shauly 
4. Coverage Rules and Insertion Utilities 
Eitan N. Shauly 
5. Design Rules, Guidelines, and Modeling for Analog Modules 
Samir Chaudhry and Eitan N. Shauly 
6. Stress-Related Layout Design Rules and Modeling 
Eitan N. Shauly 
7. Dedicated Design Rules for Memory Modules 
Yakov Roizin, Evgeny Pikhay, and Eitan N. Shauly 
8. Planar CMOS Process Flow for Digital, Mixed-Signal and RFCMOS Applications 
Eitan N. Shauly 
9. Reliability Driven Design Rules 
Kenji Okada and Eitan N. Shauly 

Biography

Eitan N. Shauly is the director of integration at Tower Semiconductor Ltd., Israel, since 1998. He has been with the organization since 1989, initially as a diffusion and ion implantation engineer and a device/integration engineer and later focusing on process integration, modeling, and design rules as well as incorporating new technology in the company’s foundries. Dr Shauly also teaches courses related to VLSI technology in the Faculty of Materials Science and Engineering, Technion – Israel Institute of Technology, Haifa, Israel. He received his BSc (1989) in materials engineering from Ben-Gurion University, Beer-Sheva, Israel, and MSc (1995) and PhD (2001) in materials engineering from the Technion – Israel Institute of Technology.