Jenny Stanford Publishing
425 pages | 111 Color Illus. | 95 B/W Illus.
In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, multigates and multichannels, and quantum computing.
"This book offers an excellent insight into the micro-to-nano transition that the electronics industry is currently engaged in. The different chapters clearly illustrate the latest stages of evolution of the 'classical' silicon transistor and explore next-generation devices which are likely to be its successor. It is an excellent reference for scientists and students interested in the future of electronics."
—Prof. Jean-Pierre Colinge, Tyndall National Institute, Ireland
"The internationally recognized authors of this book provide a fascinating, information-packed reference for scientists, engineers and students interested in ultimately scaled CMOS and the emerging new 'Beyond CMOS' device technologies. By encompassing this broad technological vista in a single volume, the authors provide unique perspectives into the current issues and future challenges facing the semiconductor industry as we expand information-processing technologies to completely new applications."
—Dr. Jim Hutchby, Semiconductor Research Corporation, USA
"This unique book is a must for everybody active in the field and/or interested in the technology of state-of-the-art and future electronic devices. Great work about small things."
—Prof. Cor Claeys, IMEC, Belgium
CMOS Nanoelectronics. Reaching the End of the Roadmap
Physical and Technological Limitations of NanoCMOS Devices to the End of the Roadmap and Beyond, S Deleonibus, O Faynot, B de Salvo, T Ernst, C Le Royer, T Poiroux & M Vinet
Advanced CMOS Devices on Bulk and SOI: Physics, Modeling and Characterization, T Poiroux & G Le Carval
Devices Structures and Carrier Transport Properties of Advanced CMOS using High Mobility Channels, S Takagi, T Tezuka, T Irisawa, S Nakaharai, T Numata, K Usuda, N Sugiyama, M Shichijo, R Nakane & S Sugahara
High-kappa Gate Dielectrics, H Wong, K Shiraishi, K Kakushima & H Iwai
Fabrication of Source and Drain — Ultra Shallow Junction, B Mizuno
New Interconnect Schemes: End of Copper, Optical Interconnects? S Laval, L Vivien, E Cassan, D Marris-Morini & J-M Fédéli
Technologies and Key Design Issues for Memory Devices, K Kim & G Jeong
FeRAM and MRAM Technologies, Y Arimoto
Advanced Charge Storage Memories: From Silicon Nanocrystals to Molecular Devices, B De Salvo & G Molas
New Concepts for Nanoelectronics. New Paths Added to CMOS Beyond the End of the Roadmap
Single Electron Devices and Applications, J Gautier, X Jehl & M Sanquer
Electronic Properties of Organic Monolayers and Molecular Devices, D Vuillaume
Carbon Nanotube Electronics, V Derycke, A Filoramo & J-P Bourgoin
Spin Electronics, K-J Lee & S H Lim
The Longer Term: Quantum Information Processing and Communication, P Jorrand