Addresses a Growing Need for High-Power and High-Frequency Transistors
Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors.
Explores Recent Progress in High-Frequency GaN Technology
Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends.
In addition, the authors:
A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
GaN High-Voltage Power Devices
AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy
Gallium Nitride Transistors on Large-Diameter Si (111) Substrate
Subramaniam Arulkumaran and Geok Ing Ng
GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications
Group III–Nitride Microwave Monolithically Integrated Circuits
GaN-Based Metal/Insulator/Semiconductor-Type Schottky Hydrogen Sensors
Ching-Ting Lee, Hsin-Ying Lee and Li-Ren Lou
InGaN-Based Solar Cells
Ezgi Dogmus and Farid Medjdoub
III-Nitride Semiconductors: New Infrared Intersubband Technologies
M Beeler and E Monroy
Gallium Nitride–Based Interband Tunnel Junctions
Siddharth Rajan, Sriram Krishnamoorthy and Fatih Akyol
Trapping and Degradation Mechanisms in GaN-Based HEMTs
Matteo Meneghini, Gaudenzio Meneghesso and Enrico Zanoni