Gallium Nitride Power Devices: 1st Edition (Hardback) book cover

Gallium Nitride Power Devices

1st Edition

Edited by Hongyu Yu, Tianli Duan

Pan Stanford

298 pages | 18 Color Illus. | 142 B/W Illus.

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Hardback: 9789814774093
pub: 2017-06-27
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Description

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China.

This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices.

GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Table of Contents

The Growth Technology of High-Voltage GaN on Silicon

Peng Xiang, Liyang Zhang, and Kai Cheng

The Characteristics of Polarization Effects in GaN Heterostructures

Zhigang Wang

The GaN Transistor Fabrication Process

Zhihong Liu

Conventional AlGaN/GaN Heterojunction Field-Effect Transistors

Lingli Jiang

Original Demonstration of Depletion Mode and Enhancement Mode AlGaN/GaN Heterojunction Field-Effect Transistors

Zhigang Wang and Bing Wang

Surface Passivation and GaN MIS HEMTs

Tianli Duan and Zhihong Liu

GaN Vertical Power Devices

Zhihong Liu

Reliability of GaN HEMT Devices

Pengkun Xia

Packaging Technologies for GaN HEMTs

Bin Dong

About the Editors

Hongyu Yu and Tianli Duan are bkoth with the Southern University of Science and Technology of China, Shenzhen

Subject Categories

BISAC Subject Codes/Headings:
SCI055000
SCIENCE / Physics
TEC008070
TECHNOLOGY & ENGINEERING / Electronics / Microelectronics
TEC021000
TECHNOLOGY & ENGINEERING / Material Science