1st Edition

Gallium Nitride Power Devices

Edited By Hongyu Yu, Tianli Duan Copyright 2017
308 Pages 18 Color & 142 B/W Illustrations
by Jenny Stanford Publishing

308 Pages 18 Color & 142 B/W Illustrations
by Jenny Stanford Publishing

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This... Read more

The Growth Technology of High-Voltage GaN on Silicon

Peng Xiang, Liyang Zhang, and Kai Cheng

The Characteristics of Polarization Effects in GaN Heterostructures

Zhigang Wang

The GaN Transistor Fabrication Process

Zhihong Liu

Conventional AlGaN/GaN Heterojunction Field-Effect Transistors

Lingli Jiang

Original Demonstration of Depletion Mode and Enhancement Mode AlGaN/GaN Heterojunction Field-Effect Transistors

Zhigang Wang and Bing Wang

Surface Passivation and GaN MIS HEMTs

Tianli Duan and Zhihong Liu

GaN Vertical Power Devices

Zhihong Liu

Reliability of GaN HEMT Devices

Pengkun Xia

Packaging Technologies for GaN HEMTs

Bin Dong

Biography

Hongyu Yu and Tianli Duan are bkoth with the Southern University of Science and Technology of China, Shenzhen