Handbook for III-V High Electron Mobility Transistor Technologies: 1st Edition (Hardback) book cover

Handbook for III-V High Electron Mobility Transistor Technologies

1st Edition

Edited by D. Nirmal, J. Ajayan

CRC Press

430 pages | 319 B/W Illus.

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pub: 2019-05-21
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Description

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).

Key Features

  • Combines III-As/P/N HEMTs with reliability and current status in single volume
  • Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis
  • Covers all theoretical and experimental aspects of HEMTs
  • Discusses AlGaN/GaN transistors
  • Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Table of Contents

1. Motivation Behind High Electron Mobility Transistors

[Mayank Chakraverty]

2. Introduction to High Electron Mobility Transistors

[Rama Komaragiri]

3. HEMT Material Technology and Epitaxial Deposition Techniques

[Rama Komaragiri]

4. Source/Drain, Gate and Channel Engineering in HEMTs

[Palash Das, T. R. Lenka, Satya Sopan Mahato, and A. K. Panda]

5. AlGaN/GaN HEMTs for High Power Applications

[P. Prajoon and Anuja Menokey]

6. AlGaN/GaN HEMT Fabrication and Challenges

[Gourab Dutta, Srikanth Kanaga, Nandita DasGupta, and Amitava DasGupta]

7. Analytical Modeling of High Electron Mobility Transistors

[N. B. Balamurugan]

8. Polarization Effects in AlGaN/GaN HEMTs

[Palash Das, T. R. Lenka, Satya Sopan Mahato, and A. K. Panda]

9. Current Collapse in AlGaN/GaN HEMTs

[Sneha Kabra and Mridula Gupta]

10. AlGaN/GaN HEMT Modeling and Simulation

[Binit Syamal and Atanu Kundu]

11. Breakdown Voltage Improvement Techniques in AlGaN/GaN HEMTs

[Vimala Palanichamy]

12. InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications

[Nilesh Kumar Jaiswal and V. N. Ramakrishnan]

13. A Study of the Elemental and Surface Characterization of AlGaN/GaN

HEMT by Magnetron Sputtering System

[Roman Garcia-Perez, Karen Lozano, Jorge Castillo, and Hasina F. Huq]

14. Metamorphic HEMTs for Sub Millimeter Wave Applications

[J. Ajayan and D. Nirmal]

15. Metal Oxide Semiconductor High Electron Mobility Transistors

[D. K. Panda, G. Amarnath, and T. R. Lenka]

16. Double Gate High Electron Mobility Transistors

[Ajith Ravindran]

About the Editors

D.Nirmal (M’08 - SM’15)is currently an Associate Professor in the Schoolof Electrical sciences, Karunya University,India. Hereceived the Ph.D. degree in Information and CommunicationEngineering from Anna University, India.His research interest includes Nano electronics,Optoelectronics, Microelectronics, VLSI Design, Device fabrication and modelling. He is the author of many Refereedinternational journals and conferences. He is a Chair of IEEE EDCoimbatore Chapter. He has been awarded as Shri.P. K. Das Memorial Best Faculty Award in the Year2013. He has received best high impact factor journal publication awardand best researcher award from Karunya University in 2012 and 2014 respectively. He has delivered manylecture andinvited to chair severalconference/workshop in National and International Level. He is currently an editor in microelectronics journal. He is a senior member of IEEE, Member of IETE, SSI, ISTE and IEI Societies.

J. Ajayan received the B.Tech. Degree in electronics and communication engineering from Kerala University, Trivandrum, India, in 2009 and the M.Tech. degree in VLSI Design from Karunya University, Coimbatore, India, in 2012 and the Ph.D. degree in electronics and communication engineering from Karunya University, Coimbatore, INDIA, in 2017. He is a Senior assistant professor in the department of electronics and communication engineering at SNS College of Technology, Coimbatore, Tamilnadu, India. He has presented papers in many international conferences and also he is an author of many Refereed international journals (Elsevier, Taylor and Francis, Springer, IOP Science).

Subject Categories

BISAC Subject Codes/Headings:
SCI055000
SCIENCE / Physics
TEC007000
TECHNOLOGY & ENGINEERING / Electrical
TEC008010
TECHNOLOGY & ENGINEERING / Electronics / Circuits / General
TEC008070
TECHNOLOGY & ENGINEERING / Electronics / Microelectronics