Handbook for III-V High Electron Mobility Transistor Technologies: 1st Edition (Hardback) book cover

Handbook for III-V High Electron Mobility Transistor Technologies

1st Edition

Edited by D. Nirmal, J. Ajayan

CRC Press

504 pages | 319 B/W Illus.

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Hardback: 9781138625273
pub: 2019-05-31
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Description

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).

Key Features

  • Combines III-As/P/N HEMTs with reliability and current status in single volume
  • Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis
  • Covers all theoretical and experimental aspects of HEMTs
  • Discusses AlGaN/GaN transistors
  • Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Table of Contents

CHAPTER-1-MOTIVATION BEHIND THE HIGH ELECTRON MOBILITY TRANSISTORS

    1. INTRODUCTION
    2. CURRENT AND FUTURE DEVICE TECHNOLOGIES
    3. ADVANCED MMIC AND TMIC TECHNOLOGIES
    4. SUBMILLIMETRE WAVE APPLICATIONS
    5. TERAHERTZ APPLICATIONS
    6. TRANSISTOR TECHNOLOGY FOR 4G/5G COMMUNICATIONS
    7. NEED FOR ENHANCING THE DATA CAPACITY OF ADVANCED WIRELESS COMMUNICATIONS
    8. SPACE APPLICATIONS
    9. DEFENCE APPLICATIONS
    10. MEDICAL AND MILLITARY APPLICATIONS

CHAPTER-2-INTRODUCTION TO HIGH ELECTRON MOBILITY TRANSISTORS

    1. HISTORY AND BACKGROUND OF HEMTS
    2. BASIC STRUCTURE OF HEMTS
    3. PRINCIPLE OF OPERATION OF HEMTS
    4. MODULATION DOPING AND 2DEG
    5. HEMT MATERIAL SYSTEMS
    6. CLASSIFICATION OF HEMTS

CHAPTER-3-HEMT MATERIAL TECHNOLOGY AND EPITAXIAL DEPOSITION TECHNIQUES

    1. III-V COMPOUND SEMICONDUCTORS
    2. PHYSICAL PROPERTIES OF III-V COMPOUND SEMICONDUCTORS
    3. ELECTRICAL PROPERTIES OF III-V COMPOUND SEMICONDUCTORS
    4. MECHANICAL PROPERTIES OF III-V COMPOUND SEMICONDUCTORS
    5. OPTICAL PROPERTIES OF III-V COMPOUND SEMICONDUCTORS
    6. III-V HETEROSTRUCTURE
    7. INTERFACE QUALITY AND EFFECTS OF TRAP DENSITY
    8. GATE MATERIALS AND STRUCTURES
    9. SOURCE/DRAIN CONTACT MATERIALS
    10. SELF ALIGNED PROCESS
    11. MOLECULAR BEAM EPITAXY
    12. CHEMICAL VAPOUR DEPOSITION
    13. METAL ORGANIC CHEMICAL VAPOUR DEPOSITION

CHAPTER-4- SOURCE/DRAIN, GATE AND CHANNEL ENGINEERING IN HEMTS

    1. HEMT SMALL SIGNAL MODEL
    2. PARASITIC RESISTANCES IN HEMTS
    3. PARASITIC CAPACITANCES IN HEMTS
    4. SOURCE/DRAIN ENGINEERING
    5. GATE ENGINEERING
    6. CHANNEL ENGINEERING
    7. CHANNEL RESISTANCE

CHAPTER-5-AlGaN/GaN HEMTS FOR HIGH POWER APPLICATIONS

    1. GENERAL STRUCTURE OF AlGaN/GaN HEMTS
    2. IMPACT OF BACK BARRIER
    3. DC AND RF CHARACTERISTICS
    4. BREAKDOWN CHARACTERISTICS
    5. SMALL SIGNAL EQUIVALENT CIRCUIT

CHAPTER-6- AlGaN/GaN HEMT FABRICATION AND CHALLENGES

    1. DEVICE DESIGN PROCESS
    2. DEVICE PROCESSING
    3. LITHOGRAPHY
    4. METALLIZATION AND ANNEALING
    5. DRY ETCHING
    6. FLOURINATION

CHAPTER-7-ANALYTICAL MODELING OF HIGH ELECTRON MOBILITY TRANSISTORS

    1. INTRODUCTION
    2. AlInSb/InSb HEMT DEVICE STRUCTURE
    3. AlInSb/InSb HEMT ANALYTICAL MODELING OF CHANNEL POTENTIAL
    4. AlInSb/InSb HEMT ANALYTICAL MODELING THRESHOLD VOLTAGE AND SUBTHRESHOLD CURRENT
    5. AlInSb/InSb HEMT ANALYTICAL MODELING OFCHARGE DENSITY AND FERMILEVEL
    6. AlInSb/InSb HEMT SCALE LENGTH MODELING WITH EFFECTIVE CONDUCTING PATH EFFECT
    7. GATE ENGINEERED HIGH ELECTRON MOBILITY TRANSISTORS
    8. DEVICE STRUCTURE OF AlInSb/InSb TMG HEMT
    9. ANALYTICAL MODELING OF CHANNEL POTENTIAL FOR AlInSb/InSbTMG HEMT
    10. ANALYTICAL MODELING THRESHOLD VOLTAGE AND SUBTHRESHOLD CURRENT FOR AlInSb/InSbTMG HEMT

CHAPTER-8 POLARIZATION EFFECTS IN AlGaN/GaN HEMTS

    1. POLARIZATION IN AlGaN/GaN HEMT
    2. PIEZOELECTRIC POLARIZATION
    3. SPONTANEOUS POLARIZATION
    4. POLARIZATION INDUCED AlGaN/GaN HEMTs
    5. POLARIZATION INDUCED EFFECTS IN AlGaN/GaN HEMTs
    6. EFFECT OF POLARIZATION ON 2DEG OF AlGaN/GaN HEMTs

CHAPTER-9 CURRENT COLLAPSE IN AlGaN/GaN HEMTS

    1. INTRODUCTION
    2. ORIGIN AND PROPERTIES OF INTERFACE AND NEAR INTERFACIAL TRAPS
    3. PROPERTIES AND INFLUENCE OF SURFACE TRAPS
    4. PROPERTIES AND INFLUENCE OF BULK TRAPS
    5. EFFECT OF TEMPERATURE ON TRAPS IN AlGaN/GaN HEMT
    6. IMPACT OF TRAPS IN AlGaN/GaN HEMT

CHAPTER-10 AlGaN/GaN HEMT MODELING AND SIMULATION

    1. SMALL SIGNAL EQUIVALENT CIRCUIT
    2. 2DEG MODELING OF AlGaN/GaN HEMT
    3. DRAIN CURRENT MODELING OF AlGaN/GaN HEMT
    4. SIMULATION OF DC PARAMETERS
    5. ANALYSIS OF RF PERFORMANCE

CHAPTER-11 BREAKDOWN VOLTAGE IMPROVEMENT TECHNIQUES IN AlGaN/GaN HEMTS

    1. EFFECT OF PASSIVATION
    2. FIELD PLATE TECHNIQUES
    3. ASYMMETRIC AlGaN/GaN HEMTS FOR HIGH POWER APPLICATIONS
    4. METHODES TO REDUCE PARASITICS
    5. SCALABILITY

CHAPTER-12-InP/InAlAs/InGaAs HEMTS FOR HIGH SPEED AND LOW POWER APPLICATIONS

    1. InP/InAlAs/InGaAs HEMT STRUCTURE
    2. PHYSICS OF InP/InAlAs/InGaAs HEMT
    3. BURIED PLATINUM TECHNOLOGY
    4. DOUBLE DELTA DOPING TECHNOLOGY
    5. DC, RF AND BREAKDOWN VOLATEG CHARACTERISTICS
    6. SCALABILITY
    7. KINK EFFECTS
    8. SHORT CHANNEL EFFECTS
    9. APPLICATIONS OF InP/InAlAs/InGaAs HEMTS

CHAPTER-13-A Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by Magnetron Sputtering System

    1. INTRODUCTION
    2. BACKGROUND
    3. MATERIALS AND METHODS (PREPARATION OF GaN AND AlGaN )
    4. RESULTS
    5. CONCLUSIONS

CHAPTER-14-METAMORPHIC HEMTS FOR SUBMILLIMETRE WAVE APPLICATIONS

    1. INTRODUCTION TO MHEMT TECHNOLOGY
    2. GaAs MHEMT FOR SUBMILLIMETRE WAVE APPLICATIONS
    3. ASYMMETRIC MHEMT FOR HIGH POWER APPLICATIONS
    4. DC AND RF CHARACTERISTICS
    5. APPLICATIONS OF MHEMTs

CHAPTER-15-METAL OXIDE SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTORS

    1. MOSHEMT STRUCTURE
    2. MOSHEMT MATERIAL SYSTEMS
    3. DC & RF CHARACETRISTICS OF MOSHEMT
    4. HIGH-K DIELECTRICS FOR MOSHEMT
    5. ADVANTAGES OF MOSHEMT

CHAPTER-16-DOUBLE GATE HIGH ELECTRON MOBILITY TRANSISTORS

    1. AlGaN/GaN DG-HEMT STRUCTURE
    2. AlGaN/GaN DC & RF CHARACTERISTICS
    3. InGaAs/InAs DG-HEMT STRUCTURE
    4. InGaAs/InAs DG-HEMT DC & RF CHARACTERISTICS
    5. PARASITICS IN DG-HEMT

About the Editors

D.Nirmal (M’08 - SM’15)is currently an Associate Professor in the Schoolof Electrical sciences, Karunya University,India. Hereceived the Ph.D. degree in Information and CommunicationEngineering from Anna University, India.His research interest includes Nano electronics,Optoelectronics, Microelectronics, VLSI Design, Device fabrication and modelling. He is the author of many Refereedinternational journals and conferences. He is a Chair of IEEE EDCoimbatore Chapter. He has been awarded as Shri.P. K. Das Memorial Best Faculty Award in the Year2013. He has received best high impact factor journal publication awardand best researcher award from Karunya University in 2012 and 2014 respectively. He has delivered manylecture andinvited to chair severalconference/workshop in National and International Level. He is currently an editor in microelectronics journal. He is a senior member of IEEE, Member of IETE, SSI, ISTE and IEI Societies.

J. Ajayan received the B.Tech. Degree in electronics and communication engineering from Kerala University, Trivandrum, India, in 2009 and the M.Tech. degree in VLSI Design from Karunya University, Coimbatore, India, in 2012 and the Ph.D. degree in electronics and communication engineering from Karunya University, Coimbatore, INDIA, in 2017. He is a Senior assistant professor in the department of electronics and communication engineering at SNS College of Technology, Coimbatore, Tamilnadu, India. He has presented papers in many international conferences and also he is an author of many Refereed international journals (Elsevier, Taylor and Francis, Springer, IOP Science).

Subject Categories

BISAC Subject Codes/Headings:
SCI055000
SCIENCE / Physics
TEC008010
TECHNOLOGY & ENGINEERING / Electronics / Circuits / General
TEC008070
TECHNOLOGY & ENGINEERING / Electronics / Microelectronics