Handbook of Solid-State Lighting and LEDs: 1st Edition (Hardback) book cover

Handbook of Solid-State Lighting and LEDs

1st Edition

Edited by Zhe Chuan Feng

CRC Press

704 pages | 536 B/W Illus.

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Hardback: 9781498741415
pub: 2017-06-02
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pub: 2017-06-12
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This handbook addresses the development of energy-efficient, environmentally friendly solid-state light sources, in particular semiconductor light emitting diodes (LEDs) and other solid-state lighting devices. It reflects the vast growth of this field and impacts in diverse industries, from lighting to communications, biotechnology, imaging, and medicine. The chapters include coverage of nanoscale processing, fabrication of LEDs, light diodes, photodetectors and nanodevices, characterization techniques, application, and recent advances. Readers will obtain an understanding of the key properties of solid-state lighting and LED devices, an overview of current technologies, and appreciation for the challenges remaining. The handbook will be useful to material growers and evaluators, device design and processing engineers, newcomers, students, and professionals in the field.

Table of Contents


From the dawn of GaN-based light-emitting devices to the present day

Hiroshi Amano

Spectrum-related quality of white-light sources

Yuejun Sun, Dragan Sekulovski, Kees Teunissen, Mart Peeters, Remy Broersma and Rene Wegh

Nanofabrication of III-nitride emitters for solid-state lighting

Tao Wang and Yaonan Hou

III-nitride deep-ultraviolet materials and applications

Jianwei Ben, Xiaojuan Sun, and Dabing Li


Efficiency droop of nitride-based light-emitting diodes

Chia-Yen Huang and Hao-Chung Kuo

Design and fabrication of patterned sapphire substrates (PSS) for GaN-based light-emitting diodes

Guoqiang Li, Haiyan Wang and Zhiting Lin

Surface Plasmon Coupled Light-Emitting Diodes

Chia-Ying Su, Chun-Han Lin, Yang Kuo, Yu-Feng Yao, Hao-Tsung Chen, Charng-Gan Tu, Chieh Hsieh, Horng-Shyang Chen, Yean-Woei Kiang, and C. C. Yang

Deep level traps in GaN epilayer and LED

Xuan Sang Nguyen and Soo Jin Chua

Photoluminescence Dynamics in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes

Tao Lin and Zhe Chuan Feng


Technological developments of UV-LEDs

C. H. Chiu, P. M. Tu, T. C. Hong, C. C. Peng, C. S. Huang and S. C. Huang

Influence of carrier localization on efficiency droop and stimulated emission in AlGaN quantum wells

Gintautas Tamulaitis

Solar-blind AlGaN devices

Jingwen Chen, Jun Zhang, Wei Zhang, Shuai Wang, Feng Wu, Jiangnan Dai, and Changqing Chen


Laser diode-driven white light sources

Faiz Rahman

InGaN laser diodes by plasma assisted molecular beam epitaxy

Czeslaw Skierbiszewski, Muziol Grzegorz, Turski Henryk, Siekacz Marcin, and Marta Sawicka

GaN-based blue and green laser diodes

Jianping Liu and Hui Yang


Photonic Crystal Light-Emitting Diodes by Nanosphere Lithography

Kwai Hei Li and Hoi Wai Choi

ZnO-based LEDs

Hao Long

Natural Light-Style Organic Light-Emitting Diodes

Jwo-Huei Jou, Meenu Singh, and Yi-Fang Tsai


III-Nitride Semiconductor LEDs Grown on Si and Stress Control of GaN Epitaxial

Baijun Zhang and Yang Liu

A hole accelerator for III-nitride light-emitting diodes

Zi-Hui Zhang, Yonghui Zhang, Xiao Wei Sun, and Wengang Bi

MOCVD growth of GaN on foundry compatible 200 mm Si

Li Zhang, E. K. Kenneth Lee, A. Eugene Fitzgerald, and Jin Soo

Terahertz spectroscopy study of III-V nitrides

Xinhai Zhang and Huafeng Shi

Internal luminescence mechanisms of III-nitride LEDs

Shijie Xu

Fabrication of thin film nitride-based light-emitting diodes

Ray-Hua Horng, Dong-Sing Wuu, and Chia-Feng Lin

About the Editor

Prof. Zhe Chuan Feng earned his Ph.D. in condensed matter physics from the University of Pittsburgh in 1987. Previously he received his B.S. (1962-68) and M.S. degrees (1978-81) from the Department of Physics at Peking University. He has had positions at Emory University (1988-1992), National University of Singapore (1992-1994), Georgia Tech (1995), EMCORE Corporation (1995-1997), Institute of Materials Research & Engineering, Singapore (1998-2001), Axcel Photonics (2001-2002) and Georgia Tech (2002-2003). In 2003, Prof. Feng joined National Taiwan University as a professor at the Graduate Institute of Photonics & Optoelectronics and Department of Electrical Engineering, focusing on materials research and MOCVD growth of LED, III-Nitrides, SiC, ZnO and other semiconductors/oxides. He is currently distinguished professor at the Laboratory of Optoelectronic Materials and Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics in the School of Physical Science and Technology at Guangxi University, Nanning, China.

Prof. Feng has edited nine review books on compound semiconductors and microstructures, porous Si, SiC and III-Nitrides, ZnO, devices and nanoengineering, and has authored or co-authored over 570 scientific papers with over 220 indexed by the Science Citation Index (SCI) and cited over 2,540 times. He has been symposium organizer and invited speaker at different international conferences and universities, and has been a reviewer for several international journals including Physics Review Letters, Physics Review B and Applied Physics Letters. He has served as guest editor for special journal issues, and has been a visiting or guest professor at Sichuan University, Nanjing Tech University, South China Normal University, Huazhong University of Science & Technology, Nankai University and Tianjin Normal University. He is a member of the international organizing committee for the Asian-Pacific Conferences on Chemical Vapor Deposition, International Conference for White LEDs and Solid State Lighting, and is on the Board of Directors for the Taiwan Association for Coating and Thin Film Technology (TACT). Prof. Feng is an elected fellow of SPIE (2013).

About the Series

Series in Optics and Optoelectronics

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Subject Categories

BISAC Subject Codes/Headings:
SCIENCE / Solid State Physics
TECHNOLOGY & ENGINEERING / Environmental / General