1st Edition

High k Gate Dielectrics

Edited By Michel Houssa Copyright 2003
614 Pages
by CRC Press

614 Pages
by CRC Press

614 Pages
by CRC Press

The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be required, making this is a subject of intensive... Read more
Introduction
The need for high-k gate dielectrics and materials requirement
Deposition techniques
ALCVD, MOCVD, PLD, MBE
Characterization
Physico-chemical characterization
X-ray and electron spectroscopies
Oxygen diffusion and thermal stability
Defect characterization by ESR
Band alignment determined by photo-injection
Electrical characteristics
Theory of defects in high-k materials
Bonding constraints and defect formation at Si/high-k interfaces
Band alignment calculations
Electron mobility at the Si/high-k interface
Model for defect generation during electrical stress
Technological aspects
Device integration issues
Device concepts for sub-100 nm CMOS technologies
Transistor characteristics
Nonvolatile memories based on high-k ferroelectric layers

Biography

Michel Houssa Laboratoire Materiaux et Microelectronique de Provence, Universite de Provence, France Silicon Processing and Device Technology Division, IMEC, Belgium