High k Gate Dielectrics: 1st Edition (Hardback) book cover

High k Gate Dielectrics

1st Edition

Edited by Michel Houssa

CRC Press

614 pages

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Hardback: 9780750309066
pub: 2003-12-01
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eBook (VitalSource) : 9780429092886
pub: 2003-12-01
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The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be required, making this is a subject of intensive research activity within the microelectronics community.

High k Gate Dielectrics reviews the state-of-the-art in high permittivity gate dielectric research. Consisting of contributions from leading researchers from Europe and the USA, the book first describes the various deposition techniques used for construction of layers at these dimensions. It then considers characterization techniques of the physical, chemical, structural, and electronic properties of these materials. The book also reviews the theoretical work done in the field and concludes with technological applications.


"High-K Gate Dielectrics is a timely review of this rapidly evolving research field. The individual chapters provide a complete, in-depth coverage of current understanding, making the book an excellent source of reference for researchers in High-K gate dielectrics and … newcomers to the field. The impressive work and methods … should make the book of interest for a readership beyond those immediately involved in high-k gate dielectric research. I recommend the book as a very good reference source and overview to researchers with interest in high-k gate dielectrics."

-Susanne Stemmer, Materials Today, September 2004

Table of Contents


The need for high-k gate dielectrics and materials requirement

Deposition techniques



Physico-chemical characterization

X-ray and electron spectroscopies

Oxygen diffusion and thermal stability

Defect characterization by ESR

Band alignment determined by photo-injection

Electrical characteristics

Theory of defects in high-k materials

Bonding constraints and defect formation at Si/high-k interfaces

Band alignment calculations

Electron mobility at the Si/high-k interface

Model for defect generation during electrical stress

Technological aspects

Device integration issues

Device concepts for sub-100 nm CMOS technologies

Transistor characteristics

Nonvolatile memories based on high-k ferroelectric layers

About the Editor

Michel Houssa Laboratoire Materiaux et Microelectronique de Provence, Universite de Provence, France Silicon Processing and Device Technology Division, IMEC, Belgium

About the Series

Series in Materials Science and Engineering

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Subject Categories

BISAC Subject Codes/Headings:
SCIENCE / Physics
SCIENCE / Solid State Physics