High-k Materials in Multi-Gate FET Devices  book cover
1st Edition

High-k Materials in Multi-Gate FET Devices




ISBN 9780367639686
Published September 17, 2021 by CRC Press
176 Pages 167 B/W Illustrations

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Book Description

High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level.

  • Provides basic knowledge about FET devices
  • Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies
  • Discusses fabrication and characterization of high-k materials
  • Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures
  • Offers detailed application of high-k materials for advanced FET devices
  • Considers future research directions

This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.

Table of Contents

Chapter 1 Introduction to Multi-Gate FET Devices

Chapter 2 High-k Gate Dielectrics and Metal Gate Stack Technology for

Advance Semiconductor Devices: An Overview

Chapter 3 Influence of High-k Material in Gate Engineering and in

Multi-Gate Field Effect Transistor Devices

Chapter 4 Trap Charges in High-k and Stacked Dielectric

Chapter 5 Impact of High-k Dielectric on the Gate-Induced Drain

Leakage of Multi-Gate FETs

Chapter 6 Advanced FET Design Using High-k Gate Dielectric and

Characterization for Low-Power VLSI

Chapter 7 Simulation and Analysis of Gate Stack DG MOSFET with

Application of High-k Dielectric Using Visual TCAD

Chapter 8 Novel Architecture in Gate All-Around (GAA) MOSFET

with High-k Dielectric for Biomolecule Detection

Chapter 9 Asymmetric Junctionless Transistor: A SRAM

Performance Study

Chapter 10 Performability Analysis of High-k Dielectric-Based

Advanced MOSFET in Lower Technology Nodes

Index

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Editor(s)

Biography

Dr. Shubham Tayal is Assistant Professor, Department of Electronics and Communication Engineering, SR University, Warangal, India. He completed his Ph.D in VLSI from NIT, Kurukshetra. He has contributed 14 (10 - SCI/SCIE, 04 - Others) research papers in international journals, 2 research papers to IEEE Conferences, and 2 research papers to other national conferences. His research interests include simulation and modelling of multi-gate semiconductor devices, device-circuit co-design in digital/analog domain, and low power VLSI design.

Dr. Parveen Singla is Professor in Electronics & Communication Engineering, Department of Chandigarh Engineering College- Chandigarh Group of Colleges, Landran, Mohali, Punjab. He did his Bachelor of Engineering in Electronics & Communication Engineering with honors from Maharishi Dayanand University, Rohtak, Master in Technology in Electronics & Communication Engineering with honors from Kurukshetra University, Kurukshetra & PhD in Communication Systems from IKG Punjab Technical University, Jalandhar, India. He has 16 years of experience in the field of teaching and research. He has published more than 35 papers in various reputed journals and national and international conferences. He also organised more than 30 technical events for students in order to enhance their technical skills and received Best International Technical Event Organiser Award. He is the guest editor of various reputed journals. His interest area includes drone technology, wireless networks, smart antennas and soft computing.

Dr. J. Paulo Davim received his Ph.D. degree in Mechanical Engineering in 1997, M.Sc. degree in Mechanical Engineering (materials and manufacturing processes) in 1991, Mechanical Engineering degree (5 years) in 1986, from the University of Porto (FEUP), the Aggregate title (Full Habilitation) from the University of Coimbra in 2005 and the D.Sc. (Higher Doctorate) from London Metropolitan University in 2013. He is Senior Chartered Engineer by the Portuguese Institution of Engineers with an MBA and Specialist titles in Engineering and Industrial Management as well as in Metrology. He is also Eur Ing by FEANI-Brussels and Fellow (FIET) of IET-London. Currently, he is Professor at the Department of Mechanical Engineering of the University of Aveiro, Portugal. He is also distinguished as honorary professor in several universities/colleges. He has more than 30 years of teaching and research experience in Manufacturing, Materials, Mechanical and Industrial Engineering, with special emphasis in Machining & Tribology. He has also interest in Management, Engineering Education and Higher Education for Sustainability. He has guided large numbers of postdoc, Ph.D. and master’s students as well as has coordinated and participated in several financed research projects. He has received several scientific awards and honours. He has worked as evaluator of projects for ERC-European Research Council and other international research agencies as well as examiner of Ph.D. thesis for many universities in different countries. He is the Editor in Chief of several international journals, Guest Editor of journals, books Editor, book Series Editor and Scientific Advisory for many international journals and conferences. Presently, he is an Editorial Board member of 30 international journals and acts as reviewer for more than 100 prestigious Web of Science journals. In addition, he has also published as editor (and co-editor) more than 150 books and as author (and co-author) more than 15 books, 100 book chapters and 500 articles in journals and conferences (more than 250 articles in journals indexed in Web of Science core collection/h-index 55+/9500+ citations, SCOPUS/h-index 60+/12000+ citations, Google Scholar/h-index 77+/19500+ citations).