1st Edition

Hydrogenated Dilute Nitride Semiconductors Theory, Properties, and Applications

Edited By Gianluca Ciatto Copyright 2015
316 Pages 20 Color & 91 B/W Illustrations
by Jenny Stanford Publishing

316 Pages
by Jenny Stanford Publishing

The nonlinear behavior of nitrogen and the passivation effect of hydrogen in dilute nitrides open the way to the manufacture of a new class of nanostructured devices with in-plane variation of the optical band gap. This book addresses the modifications of the electronic structure and of the optical and structural properties induced in these technologically important semiconductors by atomic... Read more

An Overview of Dilute Nitrides: Theory and Properties. Effects of Hydrogenation on the Electronic Properties of Dilute Nitrides. Effect of Hydrogen on Defects in Dilute Nitrides. Theory of Hydrogen in Dilute Nitrides. Microscopic Structure of N–Hn Complexes in Dilute Nitride Semiconductors Revealed by Their Vibrational Properties. Structure of Nitrogen–Hydrogen Complexes from X-Ray and Synchrotron Radiation Techniques. Stoichiometry of Nitrogen–Hydrogen Complexes in Dilute Nitrides. Technological Applications and Perspectives of Hydrogenated Dilute Nitrides.

Biography

Gianluca Ciatto received his MS in physics from the University of Bologna, Italy, in 2000 and his PhD in physics (condensed matter and synchrotron radiation) from the Université Joseph Fourier in Grenoble, France, in 2004. After a three-year postdoctoral position at the European Synchrotron Radiation Facility (ESRF), he joined in 2007 the French national synchrotron facility SOLEIL (Paris area) as a permanent research staff member. There, at the beamline SIRIUS, he is in charge of the research line devoted to the study of surfaces, interfaces, and nanostructures of semiconductors and magnetic materials. His research interests focus on understanding the structure of defects and complexes in semiconductors, mainly through the application of synchrotron radiation techniques. In particular, Dr. Ciatto is interested in III–V semiconductors for optoelectronics and solar cell applications and in dilute magnetic semiconductors and oxides. He has been working for 15 years on the structural effects of hydrogenation on dilute nitride semiconductors. He is author or coauthor of 50 refereed publications, mostly in the field of semiconductor materials and applied physics, and of two book chapters.

"The electrical and optical properties of the technologically and scientifically important dilute nitride semiconductors are strongly influenced by the introduction of atomic hydrogen. This volume is an excellent summary and resource for the most recent understanding of experimental results and state-of-the-art theoretical studies of the formation, reversibility, and microscopic structure of nitrogen–hydrogen complexes in these materials. The book details how a wide variety of experimental techniques have provided a detailed understanding of the role of hydrogen. It is the premier source for this subject and highly recommended for all those working on or with an interest in dilute nitrides."

—Prof. Steve Pearton, University of Florida, USA