III-Nitride Semiconductors: Optical Properties, 1st Edition (Hardback) book cover

III-Nitride Semiconductors

Optical Properties, 1st Edition

By Hongxing Jiang

CRC Press

464 pages | 375 Color Illus.

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Hardback: 9781560329725
pub: 2002-06-28
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The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices.

Part I begins with time-resolved studies of semiconductors and moves on to the emphasis on time-resolved photoluminescence of nitride materials and device technology and focuses on Raman studies and properties of III Nitrides.

This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds. This would be excellent for newcomers to the field and is a stimulus to further advances for experienced researchers.III-Nitride Semiconductors: Optical Properties Part I combines contributions from active experts in the field with diverse backgrounds. This book provides a very important step in advancing the state of research and device development in the field of III-nitride materials.


""This essential book…is the first to present a systematic, comprehensive overview of the optical properties of III-nitride semiconductors…"

"The style of writing is engagin, which makes the book easily accessible to anyone involved in the development of optoelectronic devices, optical spectroscopy or new materials research."

-Mircea Dragoman, National Research Institute in Microtechnology, Bucharest, Romania.."

Book Reviews

–Optics & Photonics News, June 2004

Table of Contents


Chapter One: Time-resolved Photoluminescence Studies of III-Nitrides

Chapter Two: Time-resolved Raman Studies of Wide bandgap Wurtzite GaN

Chapter Three: Optical Properties of InGaN Based III-Nitride Heterostructures

Chapter Four: Optical Properties of Homeopitaxial GaN

Chapter Five: Physics and Optical Properties of GaN/InGaN Quantum Wells

Chapter Six: Characterization of GaN and Related Alloys by Raman Scattering

Chapter Seven: Raman Studies of Wurtzite GaN and Related Compounds

Chapter Eight: Light Emission from Rare Earth Doped GaN

About the Author

Hongxing Jiang is a Professor in the Department of Physics, Kansas State University, Manhattan, Kansas.

Omar Manasreh, is a Professor in the Department of Electrical & Computer Engineering, at The University of New Mexico, Albuquerque, New Mexico. He is also the editor for the series Optoelectronic Properties of Semiconductors and Superlattices.

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