III-Nitride Semiconductors: Optical Properties, 1st Edition (Hardback) book cover

III-Nitride Semiconductors

Optical Properties, 1st Edition

By Hongxing Jiang

CRC Press

410 pages

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Hardback: 9781560329732
pub: 2002-07-26
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This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices.

Part II consists of chapters with emphasis on the optical spectroscopy of highly excited group III-nitrides, theoretical calculations and experimental measurements of optical constants of III-nitrides. The remaining five chapters focus on the relationships and properties of GaN and InGaN as relating to III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds for newcomers to the field and will be a stimulus to further advances for experienced researchers. The chapters contained in this volume constitutes a representative sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Table of Contents

Chapter One: Optical Spectroscopy of Highly Excited Group III-Nitrides

Chapter Two: Optical Constraints of III-Nitrides-Experiments

Chapter Three: Optical Functions of III-Nitrides-Calculations

Chapter Four: Interband Optical Transitions in Piezo-Strained InGaN Qunatum Wells

Chapter Five: Electric Fields in Polarized InGaN/GaN Heterostructures

Chapter Six: Inter-link Between Structural and Optical Properties of GaN and GaN/AIGaN Heterostructures

Chapter Seven: LO Phonon Assisted Excition Luminescence Processes in Heteroepitaxial GaN Films

Chapter Eight: Cubic Phase GaN and AIGaN: Expitaxial Growth and Optical Properties

About the Author

Hongxing Jiang is a Professor in the Department of Physics, Kansas State University, Manhattan, Kansas.

Omar Manasreh, is a Professor in the Department of Electrical & Computer Engineering, at The University of New Mexico, Albuquerque, New Mexico. He is also the editor of the Optoelectronic Properties of Semiconductors and Superlattices series.

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