GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III–V processing, with emphasis on HBTs. It is aimed at practicing engineers and graduate students and engineers new to the field of III–V semiconductor IC processing. The book’s primary purpose is to discuss all aspects of processing of active and passive devices, from crystal growth to backside processing, including lithography, etching, and film deposition.
Semiconductor fundamentals. GaAs devices. Phase diagrams and crystal growth. Epitaxy. Photolithography. Wet etching. Cleaning and passivation. Plasma processing and dry etching. Deposition. Ion implantation and device isolation. Diffusion. Ohmic contacts. Schottky diodes and FET processing. HEMT process. HBT processing. BiFET and BiHEMT processing. MOSFET processing. Passive components. Interconnect technology. Backside processing and wafer bumping. Electroplating. Measurements and characterization. Reliability. GaN devices and R F MEMs.
"Drawing from decades of directly relevant experience in the field, the authors have created a modern, comprehensive review of all aspects of compound semiconductor IC fabrication, useful for both experts in the field and newcomers wanting to gain familiarity with the topic. This book contains extensive references, plus useful appendices of constants, acronyms, and material properties, making it a handy and often-pulled-off-the-shelf resource for CS professionals."
—Dr. Martin J. Brophy, Senior GaAs Test, Reliability, and Development Engineer, Avago Technologies
"This book will be greatly appreciated by researchers and students engaged in work with III–V semiconductors. With the primary focus on GaAs-based HBTs and related devices, the book also describes critical issues for emerging technologies such as GaN and RF MEMS. It brings together process information and insights from widely dispersed sources and provides a physics and chemistry background, along with up-to-date process design considerations, meeting several important needs of the III–V fabrication community."
—Prof. Peter Asbeck, Department of Electrical and Computer Engineering, University of California