Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors.
III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues.
Explores silicon-based CMOS applications developed within the cutting-edge DARPA program
Providing an overview of systems, devices, and their component materials, this book:
Assembling the work of renowned experts, this is a reference for scientists and engineers working at the intersection of Si and compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field.
Part I: Basic Physical and Chemical Properties
Fundamentals and the Future of Semiconductor Device Technology, M. Mastro
The Challenge of III–V Materials Integration with Si Microelectronics, T. Li
Part II: GaN and Related Alloys on Silicon Growth and Integration Techniques
III-Nitrides on Si Substrate, J. Li, J.Y. Lin, H. Jiang, and N. Sawaki
New Technology Approaches, A. Dadgar
Part III: III–V Materials and Device Integration Processes with Si Microelectronics
Group III-A Nitrides on Si: Stress and Microstructural Evolution, S. Raghavan and J.M. Redwing
Direct Growth of III–V Devices on Silicon, T. Kazior, K.J. Herrick, and J. LaRoche
Optoelectronic Device Integrated on Si, Di Liang and J.E. Bowers
Reliability of III–V Electronic Devices, A.A. Immorlica, Jr.
Part IV: Defect and Properties Evaluation and Characterization
In Situ Curvature Measurements, Strains, and Stresses in the Case of Large Wafer Bending and Multilayer Systems, R. Clos and A. Krost
X-Ray Characterization of Group III-Nitrides, A. Krost and J. Bläsing
Luminescence in GaN, F. Bertram
Part V: Device Structures and Properties
GaN-Based Optical Devices on Silicon, A. Dadgar
The Conventional III–V Materials and Devices on Silicon, E.Y. Chang
III–V Solar Cells on Silicon, S.A. Ringel and T.J. Grassman