Indium Nitride and Related Alloys: 1st Edition (Paperback) book cover

Indium Nitride and Related Alloys

1st Edition

Edited by Timothy David Veal, Christopher F. McConville, William J. Schaff

CRC Press

645 pages | 361 B/W Illus.

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Description

Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV.

The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor.

Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field. 

Table of Contents

Molecular-beam epitaxy of InN 1; Y. Nanishi, T. Araki, and T. Yamaguchi

Thermal stability, surface kinetics, and MBE growth diagrams for N- and In-face InN; C. S. Gallinat, G. Koblmüller, and J. S. Speck

Polarity-dependent epitaxy control of InN, InGaN and InAlN; X. Q. Wang and A. Yoshikawa

InN in brief: Conductivity and chemical trends; P. D. C. King, T. D. Veal, and C. F. McConville

Transport properties of InN; V. Cimalla, V. Lebedev, O. Ambacher, V. M. Polyakov, F. Schwierz, M. Niebelschütz, G. Ecke, T. H. Myers, and W. J. Schaff

Electronic states in InN and lattice dynamics of InN and InGaN; V. Yu. Davydov and A. A. Klochikhin

Optical properties of InN and related alloys; J. W. L. Yim and J. Wu

Theory of InN bulk band structure; J. Furthmüller, F. Fuchs, and F. Bechstedt

Ellipsometry of InN and related alloys; R. Goldhahn, P. Schley, and M. Röppischer

Electronic properties of InN and InGaN: Defects and doping; W. Walukiewicz, K. M. Yu, J. W. Ager III, R. E. Jones, and N. Miller

Theory of native point defects and impurities in InN; A. Janotti and C. G. Van deWalle

Surface electronic properties of InN and related alloys; T. D. Veal, P. D. C. King, and C. F. McConville

Theory of InN surfaces; C. G. Van deWalle

Structure of InN and InGaN: Transmission electron microscopy studies; Z. Liliental-Weber

InN-based dilute magnetic semiconductors; S. M. Durbin

InN-based low dimensional structures; S. B. Che and A. Yoshikawa

InN nanocolumns; J. Grandal, M. A. Sánchez-García, E. Calleja, S. Lazić, E. Gallardo, J. M. Calleja,E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla, and O. Ambacher

Subject Categories

BISAC Subject Codes/Headings:
TEC021000
TECHNOLOGY & ENGINEERING / Material Science