Integrated Power Devices and TCAD Simulation: 1st Edition (Paperback) book cover

Integrated Power Devices and TCAD Simulation

1st Edition

By Yue Fu, Zhanming Li, Wai Tung Ng, Johnny K.O. Sin

CRC Press

364 pages | 330 B/W Illus.

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Description

From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems.

Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).

Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.

Reviews

"Semiconductor engineering has advanced to the point where the devices—in 3D with layout, thermal, and other effects thrown in—can themselves be computer modeled, along with the processes underlying the devices. This book provides a readable engineering overview of the pre-circuit considerations."

—Dennis Feucht, Innovatia Laboratories, Cayo, Belize in H2Power Today, August 2014

Table of Contents

Power Electronics: The Enabling Green Technology

Introduction to Power Electronics

History of Power Electronics

DC/DC Converters

Linear Voltage Regulators

Switched Capacitor DC/DC Converters (Charge Pumps)

Switched Mode DC/DC Converters

Comparison Between Linear Regulators, Charge Pumps, and Switched Regulators

Topologies for Non-Isolated DC/DC Switched Converters

Topologies for Isolated Switching Converters

SPICE Circuit Simulation

Power Management Systems for Battery-Powered Devices

Chapter Summary

Power Converters and Power Management ICs

Dynamic Voltage Scaling for VLSI Power Management

Integrated DC-DC Converters

Chapter Summary

Semiconductor Industry and More than Moore

The Semiconductor Industry

History of Semiconductor Industry

Food Chain Pyramid of Semiconductor Industry

Semiconductor Companies

More than Moore

Smart Power IC Technology

Smart Power IC Technology Basics

Smart Power IC Technology: Historical Perspective

Smart Power IC Technology: Industrial Perspective

Smart Power IC Technology: Technological Perspective

Introduction to TCAD Process Simulation

Overview

Mesh Set Up and Initialization

Ion Implantation

Deposition

Oxidation

Etching

Diffusion

Segregation

Process Simulator Models Calibration

Introduction to 3D TCAD Process Simulation

GPU Simulation

Introduction to TCAD Device Simulation

Overview

Basics about Device Simulation

Physical Models

AC Analysis

Trap Model in TCAD Simulation

Quantum Tunneling

Device Simulator Models Calibration

Power IC Process Flow with TCAD Simulation

Overview

A Mock-Up Power IC Process Flow

Smart Power IC Process Flow Simulation

Integrated Power Semiconductor Devices with TCAD Simulation

PN Junction Diodes

Bipolar Junction Transistors (BJTs)

LDMOS

Integrated Power Semiconductor Devices with 3D TCAD Simulations

3D Device Layout Effect

3D Simulation of LIGBT

Super Junction LDMOS

Super Junction Power FINFET

Large Interconnect Simulation

GaN Devices: An Introduction

Compound Materials vs. Silicon

Substrate Materials for GaN Devices

Polarization Properties of III-Nitride Wurtzite

AlGaN/GaN Heterojunction

Traps in AlGaN/GaN Structure

A Simple AlGaN/GaN HEMT

GaN Power HEMT Example I

GaN Power HEMT Example II

Gate Leakage Simulation of GaN HEMT

Market Prospect of Compound Semiconductors for Power Applications

Appendix A

Appendix B

Appendix C

Bibliography

Index

About the Authors

Yue Fu obtained his Ph.D from the University of Central Florida, Orlando, USA and his BS from Zhejiang University, China. He is currently the vice president of Crosslight Software, Inc., Vancouver, British Columbia, Canada. Dr. Fu is a senior member of IEEE and has more than ten years of industry and academic experience in power semiconductor devices and power electronics. He holds multiple US patents and has authored or co-authored numerous peer-reviewed papers.

Zhanming (Simon) Li obtained his Ph.D from the University of British Columbia, Vancouver, Canada in 1988. He was with the National Research Council of Canada (NRCC) from 1988 to 1995, where he developed semiconductor device simulation software. In 1995, he founded Crosslight Software, Inc., Vancouver, British Columbia, Canada with simulation technology transferred from the NRCC. Since then, Dr. Li has been the chief designer of many semiconductor process and device simulation software packages. He has been actively involved in research of TCAD simulation technology and authored or coauthored over 70 research papers.

Wai Tung Ng received his BAS, MAS, and Ph.D in electrical engineering from the University of Toronto, Ontario, Canada in 1983, 1985, and 1990, respectively. He was a member of technical staff at Texas Instruments, Dallas, USA from 1990 to 1991. He started his academic career at the University of Hong Kong in 1992. Dr. Ng returned to the University of Toronto as a faculty member in 1993 and is currently a full professor. His research is focused on the areas of power management integrated circuits, integrated DC-DC converters, smart power integrated circuits, power semiconductor devices, and fabrication processes.

Johnny Kin-On Sin obtained his BAS, MAS, and Ph.D in electrical engineering from the University of Toronto, Ontario, Canada in 1981, 1983, and 1988, respectively. He was a senior member of the research staff of Philips Research North America, Briarcliff Manor, New York, USA from 1988 to 1991. He joined the Department of Electronic and Computer Engineering at the Hong Kong University of Science and Technology in 1991 and is currently a full professor. An IEEE fellow, Dr. Sin is the holder of 13 patents and author of over 280 technical papers. His research interests include novel power semiconductor devices and power system-on-chip technologies.

About the Series

Devices, Circuits, and Systems

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Subject Categories

BISAC Subject Codes/Headings:
TEC007000
TECHNOLOGY & ENGINEERING / Electrical
TEC008000
TECHNOLOGY & ENGINEERING / Electronics / General
TEC008010
TECHNOLOGY & ENGINEERING / Electronics / Circuits / General