1st Edition
Introducing Technology Computer-Aided Design (TCAD) Fundamentals, Simulations, and Applications
Introduction
The Need
Role of TCAD
TCAD: Challenges
TCAD: 2D versus 3D
TCAD: Design Flow
Extending TCAD
Process Compact Model
Process-Aware Design
Design for Manufacturing
TCAD Calibration
TCAD Tools
Technology Boosters
BiCMOS Process Simulation
SiGe and SiGeC HBTs
Silicon Hetero-FETs
FinFETs
Advanced Devices
Memory Devices
Power Devices
Solar Cells
TCAD for SPICE Parameter Extraction
TCAD for DFM
VWF and Online Laboratory
Summary
Technology CAD Tools
History of Process and Device Simulation Tools
Commercial TCAD Tools
Silvaco Tool Overview
ATHENA
ATLAS
Stress Modeling
Synopsys TCAD Platforms
Atomistic Simulation
Summary
Technology Boosters
Stress Engineering
Intentional Mechanical Stress
Stress-Engineered Transistors
Hybrid Orientation Technology
High-k/Metal Gate
Stress Evolution during Semiconductor Fabrication
Summary
BiCMOS Process Simulations
Ion Implantation Simulation
Optical Lithography Simulation
Contact-Printing Simulation
BJT Process Simulation
3D MOS Process Simulation
Summary
SiGe and SiGeC HBTs
SiGe HBTs: Process and Device Simulation
High-Speed SiGe HBTs
SiGeC HBTs: Process and Device Simulation
Strain-Engineered SiGe HBTs
n-p-n SiGe HBTs with an Extrinsic Stress Layer
n-p-n SiGe HBT Device Employing a Si3N4 Strain Layer
n-p-n SiGe HBT Employing a SiO2 Strain Layer
Summary
Silicon Hetero-FETs
Electronic Properties of Strained Si and SiGe
Strained-Si Channel p-MOSFETs
Summary
FinFETs
Basics of FinFETs
Stress-Engineered FinFETs
FinFET Design and Optimization
Summary
Advanced Devices
Ultrathin-Body SOI
Gate-First SOI
Gate-Last SOI
3D SOI n-MOSFET
TFT
HEMTs
AlGaN/GaN HFET
3D SiC Process and Device Simulation
Summary
Memory Devices
Nanocrystal Floating-Gate Device
Technology Computer-Aided Design of Memory Devices
Process Simulation of Flash Memory Devices
Device Simulation of Flash Memory Devices
State Transition and Single-Event Upset in SRAM
Nanoscale SRAM
Summary
Biography
Chinmay K. Maiti received his B.Sc. (Hons.) in physics (1969), B.Tech. in applied physics (1972), and M.Tech. in radio physics and electronics (1974) from the University of Calcutta, India. He then did his M.Sc. (Res.) in microelectronics (1976) from Loughborough University, UK, and PhD (Eng.) in microelectronics (1984) from the Indian Institute of Technology (IIT), Kharagpur, India. He later joined IIT as professor and was head of the department (2009–2012). From 2004 to 2006 he was a visiting professor at Queen’s University, Belfast, UK. Ignoring an extension offer from IIT, he joined the SOA University, Bhubaneswar, India, in 2015. Dr. Maiti won the INSA-Royal Society (UK) Exchange of Scientists Fellowship in 2003, the CDIL Award for Industry of the Institution of Electronics and Telecommunication Engineers for the best paper in 1997, and the West Bengal Academy of Sciences Fellowship in 2007. He is interested in semiconductor device/process simulation research and microelectronics education. He has published more than 265 technical articles in the silicon-germanium and heterostructure-silicon areas, written 6 monographs and 6 book chapters, and edited Selected Works of Professor Herbert Kroemer (World Scientific, Singapore, 2008).
