2nd Edition

Introduction to Nanoelectronic Single-Electron Circuit Design




ISBN 9789814745567
Published October 6, 2016 by Jenny Stanford Publishing
348 Pages 154 B/W Illustrations

USD $125.00

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Book Description

Today, the concepts of single-electron tunneling (SET) are used to understand and model single-atom and single-molecule nanoelectronics. The characteristics of nanoelectronic devices, especially SET transistors, can be understood on the basis of the physics of nanoelectronic devices and circuit models. A circuit theory approach is necessary for considering possible integration with current microelectronic circuitry. To explain the properties and possibilities of SET devices, this book follows an approach to modeling these devices using electronic circuit theory. All models and equivalent circuits are derived from the first principles of circuit theory. Based on energy conservation, the circuit model of SET is an impulsive current source, and modeling distinguishes between bounded and unbounded currents. The Coulomb blockade is explained as a property of a single junction. In addition, this edition differs from the previous one by elaborating on the section on spice simulations and providing a spice simulation on the SET electron box circuit, including the spice netlist. Also, a complete, new proof of the two-capacitor problem in circuit theory is presented; the importance of this proof in understanding energy conservation in SET circuits cannot be underestimated. This book will be very useful for advanced undergraduate- and graduate-level students of electrical engineering and nanoelectronics and researchers in nanotechnology, nanoelectronic device physics, and computer science.

Only book modeling both single-electron tunneling and many electron tunneling from the points of view of electronics; starting from experiments, via a physics description, working towards a circuit description; and based on energy conservation, in electrical circuits, developing the impulse circuit model for single-electron tunneling.

Table of Contents

Introduction. Tunneling Experiments in Nanoelectronics. Current in Electrodynamics and Circuit Theory. Free Electrons in Quantum Mechanics. Current and Tunnel Current in Quantum Physics. Energy in Circuit Theory. Energy in the Switched Two-Capacitor Circuit. Impulse Circuit Model for Single-Electron Tunneling—Zero Tunneling Time. Impulse Circuit Model for Single-Electron Tunneling—Nonzero Tunneling Times. Generalizing the Theory to Multi-Junction Circuits. Single-Electron Tunneling Circuit Examples. Circuit Design Methodologies. More Potential Applications and Challenges.

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Author(s)

Biography

Jaap Hoekstra obtained an MSc in physics from the University of Amsterdam in 1983 and a PhD in microelectronics from the Delft University of Technology in 1988. Since then he has been employed by the Faculty of Electrical Engineering, Mathematics and Computer Science of the Delft University of Technology to teach semiconductor physics, electronics, and nanoelectronics. Prof. Hoekstra’s research focuses on bit-level systolic arrays, artificial neural networks, microelectronic devices, and nanoelectronics, especially modeling of single-electron devices.