Ionizing Radiation Effects in Electronics
From Memories to Imagers
Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques.
The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then:
- Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories
- Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits
- Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs)
Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.
Table of Contents
Introduction to the Effects of Radiation on Electronic Devices. Monte Carlo Simulation of Radiation Effects. A Complete Guide to Multiple Upsets in SRAMs Processed in Decananometric CMOS Technologies. Radiation Effects in DRAMs. Radiation Effects in Flash Memories. Microprocessor Radiation Effects. Soft-Error Hardened Latch and Flip-Flop Design. Assuring Robust Triple-Modular Redundancy Protected Circuits in SRAM-Based FPGAs. Single-Event Mitigation Techniques for Analog and Mixed-Signal Circuits. CMOS Monolithic Sensors with Hybrid Pixel-Like, Time-Invariant Front-End Electronics: TID Effects and Bulk Damage Study. Radiation Effects on CMOS Active Pixel Image Sensors. Natural Radiation Effects in CCD Devices. Radiation Effects on Optical Fibers and Fiber-Based Sensors.
Marta Bagatin received her Laurea degree (cum laude) in electronic engineering and her Ph.D in information science and technology, both from the University of Padova, Italy. She is currently a postdoctoral researcher in the Department of Information Engineering at the University of Padova. Her research concerns radiation and reliability effects on electronic devices, especially on nonvolatile semiconductor memories. Marta has authored/coauthored two book chapters and more than 90 journal and conference publications. She regularly serves on committees for events such as the Nuclear and Space Radiation Effects Conference and Radiation Effects on Components and Systems, and as a journal reviewer.
Simone Gerardin received his Laurea degree (cum laude) in electronics engineering and his Ph.D in electronics and telecommunications engineering, both from the University of Padova, Italy—where he is currently an assistant professor. His research concerns soft and hard errors induced by ionizing radiation in advanced CMOS technologies, and their interplay with device aging and ESD. Simone has authored/coauthored more than 150 journal papers and conference presentations, three book chapters, and three radiation effects conference tutorials. He is an associate editor for IEEE Transactions on Nuclear Science, a reviewer for several scientific journals, and a Radiation Effects Steering Group member-at-large.
"... timely and useful. The organization of this book is excellent, covering the most popular works in the field of radiation effects. The authors for these topics are famous, qualified, and professional at the relative field. All of them have devoted many years on their specific topics."
—Lili Ding, Northwest Institute of Nuclear Technology, Xi’an, China