Ionizing Radiation Effects in Electronics: From Memories to Imagers, 1st Edition (Hardback) book cover

Ionizing Radiation Effects in Electronics

From Memories to Imagers, 1st Edition

Edited by Marta Bagatin, Simone Gerardin

CRC Press

394 pages | 191 B/W Illus.

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pub: 2015-11-03
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Description

Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques.

The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then:

  • Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories
  • Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits
  • Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs)

Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.

Reviews

"… timely and useful. The organization of this book is excellent, covering the most popular works in the field of radiation effects. The authors for these topics are famous, qualified, and professional at the relative field. All of them have devoted many years on their specific topics."

—Lili Ding, Northwest Institute of Nuclear Technology, Xi’an, China

Table of Contents

Introduction to the Effects of Radiation on Electronic Devices

Simone Gerardin and Marta Bagatin

Monte Carlo Simulation of Radiation Effects

Mélanie Raine

A Complete Guide to Multiple Upsets in SRAMs Processed in Decananometric CMOS Technologies

Gilles Gasiot and Philippe Roche

Radiation Effects in DRAMs

Martin Herrmann

Radiation Effects in Flash Memories

Marta Bagatin and Simone Gerardin

Microprocessor Radiation Effects

Steven M. Guertin and Lawrence T. Clark

Soft-Error Hardened Latch and Flip-Flop Design

Lawrence T. Clark

Assuring Robust Triple-Modular Redundancy Protected Circuits in SRAM-Based FPGAs

Heather M. Quinn, Keith S. Morgan, Paul S. Graham, James B. Krone, Michael P. Caffrey, Kevin Lundgreen, Brian Pratt, David Lee, Gary M. Swift, and Michael J. Wirthlin

Single-Event Mitigation Techniques for Analog and Mixed-Signal Circuits

T. Daniel Loveless and W. Timothy Holman

CMOS Monolithic Sensors with Hybrid Pixel-Like, Time-Invariant Front-End Electronics: TID Effects and Bulk Damage Study

Lodovico Ratti, Luigi Gaioni, Massimo Manghisoni, Valerio Re, Gianluca Traversi, Stefano Bettarini, Francesco Forti, Fabio Morsani, Giuliana Rizzo, Luciano Bosisio, and Irina Rashevskaya

Radiation Effects on CMOS Active Pixel Image Sensors

Vincent Goiffon

Natural Radiation Effects in CCD Devices

Tarek Saad Saoud, Soilihi Moindjie, Daniela Munteanu, and Jean-Luc Autran

Radiation Effects on Optical Fibers and Fiber-Based Sensors

Sylvain Girard, Aziz Boukenter, Youcef Ouerdane, Nicolas Richard, Claude Marcandella, Philippe Paillet, Layla Martin-Samos, and Luigi Giacomazzi

About the Editors

Marta Bagatin received her Laurea degree (cum laude) in electronic engineering and her Ph.D in information science and technology, both from the University of Padova, Italy. She is currently a postdoctoral researcher in the Department of Information Engineering at the University of Padova. Her research concerns radiation and reliability effects on electronic devices, especially on nonvolatile semiconductor memories. Marta has authored/coauthored two book chapters and more than 90 journal and conference publications. She regularly serves on committees for events such as the Nuclear and Space Radiation Effects Conference and Radiation Effects on Components and Systems, and as a journal reviewer.

Simone Gerardin received his Laurea degree (cum laude) in electronics engineering and his Ph.D in electronics and telecommunications engineering, both from the University of Padova, Italy—where he is currently an assistant professor. His research concerns soft and hard errors induced by ionizing radiation in advanced CMOS technologies, and their interplay with device aging and ESD. Simone has authored/coauthored more than 150 journal papers and conference presentations, three book chapters, and three radiation effects conference tutorials. He is an associate editor for IEEE Transactions on Nuclear Science, a reviewer for several scientific journals, and a Radiation Effects Steering Group member-at-large.

About the Series

Devices, Circuits, and Systems

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Subject Categories

BISAC Subject Codes/Headings:
TEC008010
TECHNOLOGY & ENGINEERING / Electronics / Circuits / General
TEC009070
TECHNOLOGY & ENGINEERING / Mechanical
TEC059000
TECHNOLOGY & ENGINEERING / Biomedical