1st Edition
MOS Interface Physics, Process and Characterization
174 Pages
123 B/W Illustrations
by
CRC Press
174 Pages
123 B/W Illustrations
by
CRC Press
174 Pages
123 B/W Illustrations
by
CRC Press
Also available as eBook on:
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and... Read more
Introduction of MOSFET
1. Physics of interface
2. MOS processes
3. MOS characterizations
Biography
Shengkai Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the University of Tokyo in 2011 and has been engaged in Ge, III-V, SiC in MOS technology. He has published more than 100 papers and authorized 40+ patents.
Xiaolei Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences in 2013 and has been engaged in Si/Ge based MOS technology. He has published more than 100 papers.
